Unbiased wafer defect samples
    1.
    发明授权
    Unbiased wafer defect samples 有权
    无偏置晶圆缺陷样品

    公开(公告)号:US08948494B2

    公开(公告)日:2015-02-03

    申请号:US13793709

    申请日:2013-03-11

    IPC分类号: G06K9/00 G06T7/00

    摘要: Methods and systems for generating unbiased wafer defect samples are provided. One method includes selecting the defects detected by each of multiple scans performed on a wafer that have the most diversity in one or more defect attributes such that a diverse set of defects are selected across each scan. In addition, the method may include selecting the defects such that any defect that is selected and is common to two or more of the scans is not selected twice and any defects that are selected are diverse with respect to the common, selected defect. Furthermore, no sampling, binning, or classifying of the defects may be performed prior to selection of the defects such that the sampled defects are unbiased by any sampling, binning, or classifying method.

    摘要翻译: 提供了用于产生无偏置晶片缺陷样品的方法和系统。 一种方法包括选择通过在一个或多个缺陷属性中具有最多分集的晶片上执行的多次扫描中检测到的缺陷,从而跨越每个扫描选择不同的缺陷集。 此外,该方法可以包括选择缺陷,使得两个或更多个扫描选择并且是共同的任何缺陷不被选择两次,并且所选择的任何缺陷相对于共同的所选择的缺陷是多种多样的。 此外,在选择缺陷之前,可以不进行采样,分类或缺陷分类,以便通过任何采样,合并或分类方法对采样缺陷进行不偏见。

    Unbiased Wafer Defect Samples
    2.
    发明申请
    Unbiased Wafer Defect Samples 有权
    无偏置晶圆缺陷样品

    公开(公告)号:US20140133737A1

    公开(公告)日:2014-05-15

    申请号:US13793709

    申请日:2013-03-11

    IPC分类号: G06T7/00

    摘要: Methods and systems for generating unbiased wafer defect samples are provided. One method includes selecting the defects detected by each of multiple scans performed on a wafer that have the most diversity in one or more defect attributes such that a diverse set of defects are selected across each scan. In addition, the method may include selecting the defects such that any defect that is selected and is common to two or more of the scans is not selected twice and any defects that are selected are diverse with respect to the common, selected defect. Furthermore, no sampling, binning, or classifying of the defects may be performed prior to selection of the defects such that the sampled defects are unbiased by any sampling, binning, or classifying method.

    摘要翻译: 提供了用于产生无偏置晶片缺陷样品的方法和系统。 一种方法包括选择通过在一个或多个缺陷属性中具有最多分集的晶片上执行的多次扫描中检测到的缺陷,从而跨越每个扫描选择不同的缺陷集。 此外,该方法可以包括选择缺陷,使得两个或更多个扫描选择并且是共同的任何缺陷不被选择两次,并且所选择的任何缺陷相对于共同的所选择的缺陷是多种多样的。 此外,在选择缺陷之前,可以不进行采样,分类或缺陷分类,以便通过任何采样,合并或分类方法对采样缺陷进行不偏见。