OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHODS FOR MANUFACTURING SAME

    公开(公告)号:US20190177230A1

    公开(公告)日:2019-06-13

    申请号:US16092400

    申请日:2017-02-09

    IPC分类号: C04B35/453 C23C14/34

    摘要: Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %≤[Zn]≤55 atomic %, 20 atomic %≤[In]≤40 atomic %, 5 atomic %≤[Ga]≤15 atomic %, and 5 atomic %≤[Sn]≤20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.

    OXIDE SINTERED BODY AND SPUTTERING TARGET
    2.
    发明申请

    公开(公告)号:US20200181027A1

    公开(公告)日:2020-06-11

    申请号:US16614403

    申请日:2018-04-17

    IPC分类号: C04B35/453 C23C14/34

    摘要: An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]≥40 atomic %, [In]≤15 atomic %, [Sn]≤4 atomic % are satisfied.

    OXIDE SINTERED BODY AND SPUTTERING TARGET

    公开(公告)号:US20210054496A1

    公开(公告)日:2021-02-25

    申请号:US16614238

    申请日:2018-04-17

    IPC分类号: C23C14/34 C04B35/01

    摘要: An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]≥37 atomic %, [Sn]≤15 atomic %, and [Ga]/([In]+[Zn])≥0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

    OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME
    4.
    发明申请
    OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME 审中-公开
    氧化物烧结体和溅射靶,及其制造方法

    公开(公告)号:US20160111264A1

    公开(公告)日:2016-04-21

    申请号:US14894718

    申请日:2014-11-28

    摘要: An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 μm or less. In the oxide sintered body, the relations 30 atomic %≦[In]≦50 atomic %, 20 atomic %≦[Ga]≦30 atomic % and 25 atomic %≦[Sn]≦45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]≧0.05.

    摘要翻译: 通过烧结氧化铟,氧化镓和氧化锡得到氧化物烧结体。 氧化物烧结体的相对密度为90%以上,平均粒径为10μm以下。 在氧化物烧结体中,相对于原子比为30原子%< 1原子%,原子%50原子%,原子%20原子%,碳原子数20原子%和原子数25原子% 满意。 [In],[Ga]和[Sn]分别是铟镓和锡的含量(原子%)与氧化物烧结体中包含的所有金属元素的比率。 氧化物烧结体具有满足[InGaO 3]≥0.05的关系的InGaO 3相。