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    Method for producing an interconnection comprising a via extending through a substrate
    1.
    发明授权
    Method for producing an interconnection comprising a via extending through a substrate 有权

    公开(公告)号：US11114340B2

    公开(公告)日：2021-09-07

    申请号：US16070506

    申请日：2017-01-16

    申请人： KOBUS SAS

    发明人： Julien Vitiello ,  Fabien Piallat

    IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  C23C16/44 ,  C23C16/34 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  C23C16/455

    摘要： The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (1), said method successively comprising: (a) the deposition of a layer (11) of titanium nitride or tantalum nitride on a main surface (1A) of the substrate and on the inner surface (10A, 10B) of at least one hole (10) extending into at least part of the thickness of said substrate; (b) the deposition of a layer (12) of copper on said layer (11) of titanium nitride or tantalum nitride; and (c) the filling of the hole (10) with copper, said method being characterized in that, during step (a), the substrate (1) is arranged in a first deposition chamber (100), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.

    CHEMICAL VAPOR DEPOSITION DEVICE
    3.
    发明申请
    CHEMICAL VAPOR DEPOSITION DEVICE 审中-公开

    公开(公告)号：US20180320266A1

    公开(公告)日：2018-11-08

    申请号：US16040251

    申请日：2018-07-19

    申请人： KOBUS SAS

    发明人： Patrice Nal ,  Christophe Borean ,  Julien Vitiello

    IPC分类号： C23C16/44 ,  C23C16/455

    CPC分类号： C23C16/4408 ,  C23C16/45504 ,  C23C16/45517 ,  C23C16/45521 ,  C23C16/45591

    摘要： A reactor device for chemical vapor deposition includes a reaction chamber having a side wall and a substrate stand having a peripheral surface and a main surface facing a reactive gas injector, the injector and said surface defining a work space therebetween. The substrate stand is arranged in the reaction chamber such as to form an annular passage between the peripheral surface of the substrate stand and the side wall of the reaction chamber. A system for discharging gases is in fluid connection with the reaction chamber. A purge gas injector includes an injection channel leading into the reaction chamber through an annular opening. A laminar flow of purge gas is injected through the annular opening and flows in said annular passage to an opening.

    Method for depositing an insulating material into a via
    4.
    发明授权
    Method for depositing an insulating material into a via 有权

    公开(公告)号：US11189486B2

    公开(公告)日：2021-11-30

    申请号：US16633086

    申请日：2018-07-31

    申请人： KOBUS SAS

    发明人： Julien Vitiello ,  Fabien Piallat

    IPC分类号： H01L21/02 ,  C23C16/505 ,  C23C16/455

    摘要： A method for depositing a layer of a material onto a substrate, comprising: one gas-phase injection of a first chemical species with a precursor of such insulating material, into a deposition chamber of a chemical vapor deposition reactor, through a first injection path, according to a first pulse sequence; one gas-phase injection of a second chemical species with a reactant adapted to react with such precursor, into the deposition chamber, through a second injection path, according to a second pulse sequence which is phase-shifted relative to the first pulse sequence; one sequential generation of a plasma of the first chemical species and/or the second chemical species during at least one pulse of at least one of the first and second sequences, with such plasma being generated from a high frequency (HF) plasma source and a low frequency (LF) plasma source applied to the first and second injection paths, the low frequency (LF) plasma source power on the high frequency (HF) plasma source power ratio being above 1.