公开(公告)号：US20180321206A1

公开(公告)日：2018-11-08

申请号：US15773206

申请日：2016-11-03

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： SHUANG CHEN ,  DECLAN PATRICK KELLY ,  CORNELIS REINDER RONDA ,  PASCAL DE GRAAF ,  NICO MARIS ADRIAAN DE WILD ,  MARCEL MULDER ,  JEAN-PAUL JACOBS

IPC: G01N33/00

CPC classification number: G01N33/0022 ,  G01N33/0009

Abstract: The invention describes a modular fluid sensing system comprising a fluid sensing terminal (150) and removable fluid channel units (101, 102, 103). The fluid channel units (101, 102, 103) comprise or can be combined with fluid treatment units as filters, sensors and seals. The fluid channel units (101, 102, 103) can be combined in accordance with the present needs of the user of the fluid sensing system. The invention therefore enables a reconfigurable channel system with reconfigurable measurement and treatment options within a fluid sensing system.

公开(公告)号：US20150162852A1

公开(公告)日：2015-06-11

申请号：US14624945

申请日：2015-02-18

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： PETER DIRKSEN ,  RUEDIGER MAUCZOK ,  KORAY KARAKAYA ,  JOHAN HENDRIK KLOOTWIJK ,  BOUT MARCELIS ,  MARCEL MULDER

IPC: H02N1/00 ,  H02N1/08

CPC classification number: H02N1/006 ,  B06B1/0292 ,  B81B3/00 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00373 ,  H02N1/08

Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

Abstract translation: 本发明涉及一种制造电容微加工的换能器（100），特别是CMUT的方法，该方法包括在衬底（1）上沉积第一电极层（10），沉积第一电介质膜（20） 在所述第一电极层（10）上，在所述第一介电膜（20）上沉积牺牲层（30），所述牺牲层（30）可去除以形成所述换能器的空腔（35），沉积第二电介质膜 40），并且在所述第二电介质膜（40）上沉积第二电极层（50），其中所述第一电介质膜（20）和/或所述第二电介质膜（40）包括第一层 包括氧化物，包含高k材料的第二层和包含氧化物的第三层，并且其中所述沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器（100），特别是CMUT。

公开(公告)号：US20150162851A1

公开(公告)日：2015-06-11

申请号：US14623595

申请日：2015-02-17

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： JOHAN H. KLOOTWIJK ,  PETER DIRKSEN ,  MARCEL MULDER ,  ELISABETH M.L. MOONEN

IPC: H02N1/00 ,  H02N1/08

CPC classification number: B60B1/0292 ,  B06B1/0292 ,  H02N1/006 ,  H02N1/08 ,  Y10T29/49005

Abstract: The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process, wherein the transducer can be manufactured as a post-processing feature during a CMOS process.

Abstract translation: 该专利申请公开了一种电容式微机械超声换能器，其包括硅衬底; 一个空腔 布置在硅衬底和腔之间的第一电极; 其中所述第一电极布置在所述空腔下方; 膜，其中所述膜布置在所述腔的上方并与所述第一电极相对; 第二电极，其中所述第二电极布置在所述空腔上方并与所述第一电极相对; 其中所述第二电极布置在所述膜中或靠近所述膜，其中所述第一电极和所述第二电极适于由电压供应; 以及布置在所述第一电极和所述第二电极之间的第一隔离层，其中所述第一隔离层包括电介质。 还描述了用于产生或检测超声波的系统，其中该系统包括根据该专利申请的换能器。 此外，公开了根据专利申请的用于制造换能器的方法，其中借助于CMOS制造工艺制造所述换能器，其中所述换能器可以在CMOS工艺期间被制造为后处理特征。