CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER
    3.
    发明申请
    CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER 审中-公开
    电容式MICROMACHINED超声波传感器

    公开(公告)号:US20150162851A1

    公开(公告)日:2015-06-11

    申请号:US14623595

    申请日:2015-02-17

    Abstract: The patent application discloses a capacitive micromachined ultrasound transducer, comprising a silicon substrate; a cavity; a first electrode, which is arranged between the silicon substrate and the cavity; wherein the first electrode is arranged under the cavity; a membrane, wherein the membrane is arranged above the cavity and opposite to the first electrode; a second electrode, wherein the second electrode is arranged above the cavity and opposite to the first electrode; wherein the second electrode is arranged in or close to the membrane, wherein the first electrode and the second electrode are adapted to be supplied by a voltage; and a first isolation layer, which is arranged between the first electrode and the second electrode, wherein the first isolation layer comprises a dielectric. It is also described a system for generating or detecting ultrasound waves, wherein the system comprises a transducer according to the patent application. Further, it is disclosed a method for manufacturing a transducer according to the patent application, wherein the transducer is manufactured with the help of a CMOS manufacturing process, wherein the transducer can be manufactured as a post-processing feature during a CMOS process.

    Abstract translation: 该专利申请公开了一种电容式微机械超声换能器,其包括硅衬底; 一个空腔 布置在硅衬底和腔之间的第一电极; 其中所述第一电极布置在所述空腔下方; 膜,其中所述膜布置在所述腔的上方并与所述第一电极相对; 第二电极,其中所述第二电极布置在所述空腔上方并与所述第一电极相对; 其中所述第二电极布置在所述膜中或靠近所述膜,其中所述第一电极和所述第二电极适于由电压供应; 以及布置在所述第一电极和所述第二电极之间的第一隔离层,其中所述第一隔离层包括电介质。 还描述了用于产生或检测超声波的系统,其中该系统包括根据该专利申请的换能器。 此外,公开了根据专利申请的用于制造换能器的方法,其中借助于CMOS制造工艺制造所述换能器,其中所述换能器可以在CMOS工艺期间被制造为后处理特征。

    A CMUT ARRAY COMPRISING AN ACOUSTIC WINDOW LAYER

    公开(公告)号:US20180065148A1

    公开(公告)日:2018-03-08

    申请号:US15554454

    申请日:2016-02-23

    CPC classification number: B06B1/0292 G01S7/521 G01S15/02

    Abstract: An ultrasound array for acoustic wave transmission comprising at least one capacitive micro-machined ultrasound transducer (CMUT) cell (6), wherein the CMUT cell comprises a substrate (4); a first electrode (7); a cell membrane (5) having a second electrode (7′), which opposes the first electrode and the substrate with a cavity (8) there between, wherein the membrane is arranged to vibrate upon the cell activation; and an acoustic window layer (13), overlaying the cell membrane, and having an inner surface opposing the cell membrane and an outer surface. The acoustic window layer comprises a first layer comprising molecules of antioxidant and a polymeric material (47) with insulating particles (41) embedded therein, wherein the polymeric material consists of hydrogen and carbon atoms and has a density equal or below 0.95 g/cm3 and an acoustic impedance equal or above 1.45 MRayl. This acoustic window layer provides an improved acoustic performance, such as wide bandwidth and low attenuation, in application with the CMUT based array.

    CMUT ARRAY COMPRISING AN ACOUSTIC WINDOW LAYER

    公开(公告)号:US20180021813A1

    公开(公告)日:2018-01-25

    申请号:US15552585

    申请日:2016-02-25

    Abstract: An ultrasound array for acoustic wave transmission comprising at least one capacitive micro-machined ultrasound transducer (CMUT) cell (6), wherein the CMUT cell comprises a substrate (4) having a first electrode (7); a cell membrane (5) having a second electrode (7′), which opposes the first electrode with a cavity (8) there between, wherein the membrane is arranged to vibrate upon the cell activation; and an acoustic window layer (13), overlaying the cell membrane, and having an inner surface opposing the cell membrane and an outer surface; the acoustic window layer is in a direct contact with the cell membrane and comprises a first layer comprising molecules of antioxidant and a polymeric material, wherein the polymeric material consists of hydrogen and carbon atoms and has a density equal or 3 below 0.95 g/cm and an acoustic impedance equal or above 1.4 MRayl. The array may further comprise comprising at least one drive circuit coupled to the cell and adapted to (a) bring the membrane into a collapsed state in which the membrane is collapsed to the substrate in the central part, by applying a d.c. voltage over the first and the second electrodes of the at least one CMUT cell, and (b) activate the CMUT cell by applying an a.c. voltage having a CMUT operating frequency over the first and the second electrodes of the at least one said CMUT cell. This acoustic window layer provides an improved acoustic performance, such as wide bandwidth and low attenuation, in application with the CMUT based array, especially in the collapsed operation mode.

    CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    CAPACITIVE MICRO-MACHINED TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    电容式微机械传动器及其制造方法

    公开(公告)号:US20150162852A1

    公开(公告)日:2015-06-11

    申请号:US14624945

    申请日:2015-02-18

    Abstract: The present invention relates to a method of manufacturing a capacitive micro-machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), and depositing a second electrode layer (50) on the second dielectric film (40), wherein the first dielectric film (20) and/or the second dielectric film (40) comprises a first layer comprising an oxide, a second layer comprising a high-k material, and a third layer comprising an oxide, and wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.

    Abstract translation: 本发明涉及一种制造电容微加工的换能器(100),特别是CMUT的方法,该方法包括在衬底(1)上沉积第一电极层(10),沉积第一电介质膜(20) 在所述第一电极层(10)上,在所述第一介电膜(20)上沉积牺牲层(30),所述牺牲层(30)可去除以形成所述换能器的空腔(35),沉积第二电介质膜 40),并且在所述第二电介质膜(40)上沉积第二电极层(50),其中所述第一电介质膜(20)和/或所述第二电介质膜(40)包括第一层 包括氧化物,包含高k材料的第二层和包含氧化物的第三层,并且其中所述沉积步骤通过原子层沉积进行。 本发明还涉及通过这种方法制造的电容式微加工的换能器(100),特别是CMUT。

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