公开(公告)号：US11552267B2

公开(公告)日：2023-01-10

申请号：US16941891

申请日：2020-07-29

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Byung Chul Jang ,  Jun Hwe Cha

IPC: H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  G06N3/063 ,  H01L51/05

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

公开(公告)号：US20210143349A1

公开(公告)日：2021-05-13

申请号：US16941891

申请日：2020-07-29

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Byung Chul Jang ,  Jun Hwe Cha

IPC: H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  G06N3/063

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.