公开(公告)号：US20230309327A1

公开(公告)日：2023-09-28

申请号：US18188360

申请日：2023-03-22

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Sang Su PARK ,  Sung Yool Choi ,  Jun Hwe Cha ,  Jung Yeop Oh

IPC: H10K10/50 ,  H10K85/10 ,  H10K10/82 ,  H10B63/00 ,  H10K71/10

CPC classification number: H10K10/50 ,  H10K85/111 ,  H10K10/82 ,  H10B63/20 ,  H10K71/10

Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

公开(公告)号：US11552267B2

公开(公告)日：2023-01-10

申请号：US16941891

申请日：2020-07-29

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Byung Chul Jang ,  Jun Hwe Cha

IPC: H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  G06N3/063 ,  H01L51/05

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

公开(公告)号：US20210143349A1

公开(公告)日：2021-05-13

申请号：US16941891

申请日：2020-07-29

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Byung Chul Jang ,  Jun Hwe Cha

IPC: H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  G06N3/063

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.