公开(公告)号：US20230307569A1

公开(公告)日：2023-09-28

申请号：US18327071

申请日：2023-06-01

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan JEONG ,  Ki Seok JEON

IPC: H01L31/0749 ,  H01L31/0445 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0445 ,  H01L31/022466 ,  H01L31/0376 ,  H01L31/1868

Abstract: A method of manufacturing a carrier-selective contact junction silicon solar cell includes: preparing a conductive silicon substrate; forming a first passivation layer and a second passivation layer on and under the conductive silicon substrate, respectively; forming an electron-selective contact layer under the second passivation layer; forming a hole-selective contact layer on the first passivation layer; forming an upper transparent electrode on the hole-selective contact layer; forming an upper metal electrode on the upper transparent electrode; and forming a lower metal electrode under the electron-selective contact layer. In forming the hole-selective contact layer, a sandwich-structured multilayer film is formed by depositing a copper iodide thin film on a top surface and a bottom surface of an iodine thin film, and a single-film copper iodide thin film is formed by low-temperature annealing the sandwich-structured multilayer film.

公开(公告)号：US20220005966A1

公开(公告)日：2022-01-06

申请号：US17289730

申请日：2019-07-22

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan JEONG ,  Ki Seok JEON

IPC: H01L31/0749 ,  H01L31/0224 ,  H01L31/0445 ,  H01L31/0376 ,  H01L31/18

Abstract: In a carrier-selective contact junction silicon solar cell according to the present invention, a copper iodine thin film as a hole-selective contact layer is formed through low-temperature annealing so that excellent p-type semiconductor properties are maintained, and electrical conductivity and passivation properties become excellent, thereby improving photoelectric conversion efficiency.