公开(公告)号：US20160035620A1

公开(公告)日：2016-02-04

申请号：US14781115

申请日：2014-03-24

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Young Sik Song ,  Tae Hong YIM

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76843 ,  H01L21/2855 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient Cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated Cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components. Moreover, stress of the seed layer can be lowered, thereby enhancing plating adhesion.

Abstract translation: 公开了一种以高纵横比通孔形成种子层的方法和由此形成的具有高纵横比的通孔的半导体器件。 因此，可以有效地进行Cu填充，并且可以简单且有利地增强种子层对填充Cu的电镀附着力，从而在形成用于电子部件的金属布线时赋予高耐久性。 此外，可以降低种子层的应力，从而增强电镀附着力。