公开(公告)号：US20140299833A1

公开(公告)日：2014-10-09

申请号：US14242146

申请日：2014-04-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byung-ki CHEONG ,  Sudong KIM ,  Suyoun LEE ,  Sang-Yeol SHIN ,  Hyung-Woo AHN

IPC: H01L45/00

CPC classification number: H01L45/143 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1625

Abstract: Disclosed is a method for manufacturing a chalcogenide switching device includes forming a first electrode on a SOI substrate, forming a chalcogenide material composed of Gex and Se1-x formed on the first electrode, and forming a second electrode on the chalcogenide material, wherein the value x is greater than 0 and smaller than 1. A chalcogenide switching device manufactured by this method is also disclosed.

Abstract translation: 公开了一种硫族化物开关器件的制造方法，包括在SOI衬底上形成第一电极，形成在第一电极上形成的由Gex和Se1-x构成的硫族化物材料，并在硫族化物材料上形成第二电极， x大于0且小于1.还公开了通过该方法制造的硫族化物开关器件。

公开(公告)号：US20170271537A1

公开(公告)日：2017-09-21

申请号：US15444806

申请日：2017-02-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Suyoun LEE ,  Byung-ki CHEONG ,  Seong Keun KIM ,  Do Kyung HWANG ,  Hyunsu JU ,  Young Tack LEE

IPC: H01L31/032 ,  H01L31/109 ,  H01L31/112 ,  H01L27/146

CPC classification number: H01L31/0324 ,  H01L27/14645 ,  H01L27/14647 ,  H01L31/032 ,  H01L31/109 ,  H01L31/1129

Abstract: Embodiments are directed to a chalcogenide material-based filterless color image sensor, which includes a substrate, a first chalcogenide material layer formed on a substrate for a first color, a second chalcogenide material layer formed on the first chalcogenide material layer for a second color, and a third chalcogenide material layer formed on the second chalcogenide material layer for a third color.