公开(公告)号：US20240105741A1

公开(公告)日：2024-03-28

申请号：US18476129

申请日：2023-09-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE ,  Eunsung PARK

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/1461 ,  G01S7/4816 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: Disclosed is a single-photon avalanche diode comprises a heavily doped region, a first lightly doped region covering the heavily doped region, a guard ring provided on a side surface of the first lightly doped region, a first well covering the first lightly doped region and the guard ring, and a contact electrically connected to the first well. The heavily doped region, the first lightly doped region, and the guard ring have a first conductivity type. The first well and the contact have a second conductivity type.