公开(公告)号：US20200381614A1

公开(公告)日：2020-12-03

申请号：US15930892

申请日：2020-05-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byoung-Chul MIN ,  Jun Woo CHOI ,  Hee Gyum PARK

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.