公开(公告)号：US20170018625A1

公开(公告)日：2017-01-19

申请号：US15193571

申请日：2016-06-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol KOO ,  Hyung-jun KIM ,  Jun Woo CHOI ,  Joonyeon CHANG ,  Suk Hee HAN ,  Chaun JANG ,  Youn Ho PARK

IPC: H01L29/51 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/516 ,  H01L29/41775 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66984 ,  H01L43/00

Abstract: Disclosed is a transistor including a topological insulator. The transistor includes: a substrate; a topological insulator provided on the substrate; a drain electrode provided on the topological insulator; a source electrode separated from the drain electrode, provided on the topological insulator, and including a ferromagnetic substance; a tunnel junction layer provided on the source electrode; and a gate electrode provided on the tunnel junction layer. A spin direction of the topological insulator is fixed by a current flowing to a surface thereof, and a spin direction of the source electrode is changed to a predetermined direction by a voltage applied to the gate electrode.

Abstract translation: 公开了包括拓扑绝缘体的晶体管。 晶体管包括：衬底; 设置在基板上的拓扑绝缘体; 设置在拓扑绝缘体上的漏电极; 与所述漏电极分离的源电极，设置在所述拓扑绝缘体上，并且包含铁磁性物质; 设置在源电极上的隧道结层; 以及设置在隧道结层上的栅电极。 拓扑绝缘体的自旋方向由流过其表面的电流固定，并且通过施加到栅电极的电压将源极的自旋方向改变到预定方向。

公开(公告)号：US20200381614A1

公开(公告)日：2020-12-03

申请号：US15930892

申请日：2020-05-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byoung-Chul MIN ,  Jun Woo CHOI ,  Hee Gyum PARK

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.

公开(公告)号：US20220020921A1

公开(公告)日：2022-01-20

申请号：US17100155

申请日：2020-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun Woo CHOI ,  Hee Young KWON ,  Byoung Chul MIN ,  Suk Hee HAN ,  Hye Jung CHANG

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

Abstract: Provided is a method of a generating a skyrmion. The method includes a step of preparing a magnetic multilayer system and a step of generating a skyrmion at a temperature of 400° C. or higher by adjusting the magnetic anisotropy value and the magnetization value of the magnetic multilayer system.

公开(公告)号：US20140264514A1

公开(公告)日：2014-09-18

申请号：US14052129

申请日：2013-10-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol KOO ,  Hyung-Jun KIM ,  Joon Yeon CHANG ,  Jun Woo CHOI ,  Suk Hee HAN

IPC: H01L27/092 ,  H01L27/22

CPC classification number: H01L29/0673 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66984

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract translation: 提供了包括栅电极，沟道，连接到栅电极和沟道的源电极以及连接到栅电极和沟道的第一漏电极和第二漏电极的互补器件。 第一/第二漏极形成为使得根据施加到栅电极的电压，注入到源电极的电子自旋通过沟道从源电极移动到第一/第二漏电极，同时在第一 /第二个方向。 到达第一漏电极和第二漏电极的电子自旋的方向彼此相反。