公开(公告)号：US20180076084A1

公开(公告)日：2018-03-15

申请号：US15416727

申请日：2017-01-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyung-Jun KIM ,  Sanghyeon KIM ,  Jae-Phil SHIM ,  Yeon-Su KIM ,  Heejeong LIM

IPC: H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16

Abstract: A method for manufacturing a semiconductor device includes: forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from that of germanium (Ge) by a preset threshold or below; forming a germanium (Ge) layer on the sacrificial layer; forming an insulation layer on a second substrate; bonding the germanium (Ge) layer onto the insulation layer; and removing the sacrificial layer and the first substrate by etching the sacrificial layer in a state where the germanium (Ge) layer is bonded to the insulation layer. In this method, a germanium-on-insulator (GeOI) structure having various surface orientations may be formed by means of epitaxial lift-off (ELO), and a strain may be applied to the germanium (Ge) layer using a lattice constant of the sacrificial layer.