公开(公告)号：US20200149152A1

公开(公告)日：2020-05-14

申请号：US16198663

申请日：2018-11-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehyun PARK ,  Yumin SIM ,  Jaikyeong KIM

IPC: C23C16/02 ,  G02F1/01 ,  G02F1/00 ,  C23C16/26

Abstract: A method for synthesizing a graphene pattern is provided. According to the method, a catalyst block including a catalyst material is physically adhered to a portion of a growth substrate to form an interface between the catalyst block and the growth substrate. A graphene thin film is formed selectively at the interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor.

公开(公告)号：US20210164096A1

公开(公告)日：2021-06-03

申请号：US16880432

申请日：2020-05-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehyun PARK ,  Dongjun LEE

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/02

Abstract: A masking block includes a base substrate, a gamma-alumina thin film disposed on the base substrate, and a hexagonal boron nitride thin film doped with carbon and oxygen and disposed on the gamma-alumina thin film. An amount of carbon in the hexagonal boron nitride thin film is 1 at % to 15 at %.