公开(公告)号：US20200298275A1

公开(公告)日：2020-09-24

申请号：US16822018

申请日：2020-03-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byung Chul LEE ,  DONG-HYUN KANG ,  Jin soo PARK ,  Tae Song KIM

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00

Abstract: A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.