公开(公告)号：US10163983B1

公开(公告)日：2018-12-25

申请号：US15817666

申请日：2017-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang-Soo Lee ,  Jong Hyuk Park ,  Jeong Gon Son ,  Young Jin Kim ,  Minsung Kim ,  Heesuk Kim

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  H01B1/24

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a core-shell structure containing: a wire-type conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. Because a first resistive layer, a conductive layer and a second resistive layer are formed as one layer and bipolar conductive filaments are formed on the substantially different resistive layers, the memory can exhibit complementary resistive switching characteristics. In addition, the complementary resistance switchable memory of the present disclosure can be prepared through a simplified process at low cost by introducing a simple process of coating a paste in which a complementary resistance switchable filler and a supporting material are mixed.