公开(公告)号：US10163983B1

公开(公告)日：2018-12-25

申请号：US15817666

申请日：2017-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang-Soo Lee ,  Jong Hyuk Park ,  Jeong Gon Son ,  Young Jin Kim ,  Minsung Kim ,  Heesuk Kim

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  H01B1/24

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a core-shell structure containing: a wire-type conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. Because a first resistive layer, a conductive layer and a second resistive layer are formed as one layer and bipolar conductive filaments are formed on the substantially different resistive layers, the memory can exhibit complementary resistive switching characteristics. In addition, the complementary resistance switchable memory of the present disclosure can be prepared through a simplified process at low cost by introducing a simple process of coating a paste in which a complementary resistance switchable filler and a supporting material are mixed.

公开(公告)号：US09966134B1

公开(公告)日：2018-05-08

申请号：US15407357

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk Park ,  Sang-Soo Lee ,  Keun-Young Shin ,  Young Jin Kim ,  Min Park ,  Heesuk Kim ,  Jeong Gon Son ,  Wan Ki Bae

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/11

CPC classification number: H01L45/1253 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0016 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/11 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/16 ,  H01L45/1675

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.