公开(公告)号：US20140048796A1

公开(公告)日：2014-02-20

申请号：US13774722

申请日：2013-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Shin Ik KIM ,  Jin Sang KIM ,  Ji Won CHOI ,  Seok Jin YOON ,  Chong Yun KANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/24 ,  H01L29/408 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/7786

Abstract: Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

Abstract translation: 提供一种氧化物电子器件，包括：氧化物衬底; 氧化物薄膜层，其形成在所述氧化物基板上并且含有相对于所述氧化物基板为异质的氧化物; 以及形成在所述氧化物薄膜层上并且控制在所述氧化物衬底和所述氧化物薄膜层之间的界面处产生的二维电子气（2DEG）的导电性的铁电层。 还提供了一种氧化物电子器件的制造方法，包括：在氧化物衬底上沉积相对于氧化物衬底是异质的氧化物以形成氧化物薄膜层; 以及在所述氧化物薄膜层上形成铁电体层，其中所述铁电体层控制在所述氧化物基板和所述氧化物薄膜层之间的界面处产生的2DEG的导电性。