公开(公告)号：US20170018625A1

公开(公告)日：2017-01-19

申请号：US15193571

申请日：2016-06-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol KOO ,  Hyung-jun KIM ,  Jun Woo CHOI ,  Joonyeon CHANG ,  Suk Hee HAN ,  Chaun JANG ,  Youn Ho PARK

IPC: H01L29/51 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/516 ,  H01L29/41775 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66984 ,  H01L43/00

Abstract: Disclosed is a transistor including a topological insulator. The transistor includes: a substrate; a topological insulator provided on the substrate; a drain electrode provided on the topological insulator; a source electrode separated from the drain electrode, provided on the topological insulator, and including a ferromagnetic substance; a tunnel junction layer provided on the source electrode; and a gate electrode provided on the tunnel junction layer. A spin direction of the topological insulator is fixed by a current flowing to a surface thereof, and a spin direction of the source electrode is changed to a predetermined direction by a voltage applied to the gate electrode.

Abstract translation: 公开了包括拓扑绝缘体的晶体管。 晶体管包括：衬底; 设置在基板上的拓扑绝缘体; 设置在拓扑绝缘体上的漏电极; 与所述漏电极分离的源电极，设置在所述拓扑绝缘体上，并且包含铁磁性物质; 设置在源电极上的隧道结层; 以及设置在隧道结层上的栅电极。 拓扑绝缘体的自旋方向由流过其表面的电流固定，并且通过施加到栅电极的电压将源极的自旋方向改变到预定方向。