公开(公告)号：US20190072516A1

公开(公告)日：2019-03-07

申请号：US15939721

申请日：2018-03-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young In JHON ,  Young Tae BYUN ,  Yong Tae Kim ,  Young Min JHON

IPC: G01N27/414 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: G01N27/4146 ,  G01N27/414 ,  G01N27/4145 ,  H01L21/823462 ,  H01L27/0886 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/785

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

公开(公告)号：US20200158576A1

公开(公告)日：2020-05-21

申请号：US16292328

申请日：2019-03-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min JHON ,  Minah SEO ,  Young In JHON

IPC: G01J5/02 ,  G01J5/34 ,  G01J5/12

Abstract: The present invention relates to a terahertz (THz) wave detecting sensor including a MXene material represented by the following Formula 1 as a sensing material: M(n+1)Xn,  [Formula 1] wherein, in Formula 1, M is at least one transition metal selected from early transition metal elements, X is at least one selected from C and N, and n is an integer selected from 1 to 3.

公开(公告)号：US20180147542A1

公开(公告)日：2018-05-31

申请号：US15822079

申请日：2017-11-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min JHON ,  Young In JHON ,  Seok LEE

IPC: B01D67/00 ,  B01D71/02 ,  C01B32/194

CPC classification number: B01D67/0062 ,  B01D67/009 ,  B01D67/0093 ,  B01D71/021 ,  B01D2323/34 ,  C01B32/194 ,  C01B32/198 ,  C01B2204/04

Abstract: One aspect of the disclosed is to provide a method of manufacturing a nanoporous multilayer graphene membrane, including a first step of oxidizing a surface of a multilayer graphene membrane, a second step of reducing the oxidized surface of the multilayer graphene to carry out reductive etching such that oxidized carbon atoms on the surface are naturally and randomly dispersed, and a third step of repeatedly performing a series of the first and the second steps until nanopores penetrating the multilayer graphene are formed.