公开(公告)号：US09831452B2

公开(公告)日：2017-11-28

申请号：US14282026

申请日：2014-05-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chulki Kim ,  Yeong Jun Kim ,  Young Mo Jung ,  Seong Chan Jun ,  Taikjin Lee ,  Seok Lee ,  Young Tae Byun ,  Deok Ha Woo ,  Sun Ho Kim ,  Min Ah Seo ,  Jae Hun Kim ,  Jong Chang Yi

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10 ,  C01B31/04

CPC classification number: H01L51/0558 ,  C01B32/194 ,  H01L51/0012 ,  H01L51/002 ,  H01L51/0045 ,  H01L51/0093 ,  H01L51/0562 ,  H01L51/0583 ,  H01L51/107

Abstract: A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.