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公开(公告)号:US20190157526A1
公开(公告)日:2019-05-23
申请号:US16260933
申请日:2019-01-29
申请人: ROHM CO., LTD.
发明人: Hirotaka OBUCHI , Junichi ITAI
IPC分类号: H01L33/56 , H01L33/14 , H01L33/60 , H01L33/42 , H01L33/32 , H01L33/62 , H01L33/06 , H01L33/12
CPC分类号: H01L33/56 , H01L33/06 , H01L33/12 , H01L33/145 , H01L33/32 , H01L33/42 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/107 , H01L51/448 , H01L51/5246
摘要: A semiconductor light emitting device includes a substrate made of resin, a first wiring and a second wiring formed on the substrate, a light emitting element disposed on the substrate and electrically connected to the first wiring and the second wiring, and a transparent sealing resin configured to seal the light emitting element. The substrate contains an acrylic resin, and the sealing resin contains silicone.
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公开(公告)号:US20180301663A1
公开(公告)日:2018-10-18
申请号:US15650989
申请日:2017-07-17
申请人: UNISTARS CORPORATION
发明人: SHANG-YI WU , HSIN-HSIEN HSIEH
CPC分类号: H01L51/5268 , H01L51/107 , H01L51/524 , H01L51/5275
摘要: An optoelectronic package includes a substrate, a light emitting chip, an optical sealant, and an optical scattering layer. The substrate has a carrying plane and a wiring layer formed on the carrying plane. The light emitting chip used for emitting a light ray is mounted on the carrying plane and electrically connected to the wiring layer. The optical sealant covers the carrying plane and wraps the light emitting chip. The optical sealant is located in the path of the light ray. The optical scattering layer covers the optical sealant. The optical sealant located in the path of the light ray is formed between the substrate and the optical scattering layer. Preferably, the refractive index of the optical sealant is larger than or equal to the refractive index of the optical scattering layer.
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公开(公告)号:US20180166503A1
公开(公告)日:2018-06-14
申请号:US15121986
申请日:2016-04-08
发明人: MIAN ZENG , HSIANGCHIH HSIAO , SHENDONG ZHANG
CPC分类号: H01L27/286 , H01L21/8238 , H01L27/092 , H01L27/1225 , H01L27/283 , H01L29/7869 , H01L51/0541 , H01L51/107
摘要: A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and an etched barrier layer. The substrate defines an n-type transistor region and a p-type transistor region adjacent to the n-type transistor region. The n-type semiconductor layer is disposed on the substrate and within the n-type transistor region, and has a metal oxide material. The p-type semiconductor layer is disposed on the substrate and within the p-type transistor region, and has an organic semiconductor material. The etched barrier layer is formed on the n-type semiconductor layer and disposed within the n-type transistor region and the p-type transistor region, and the p-type semiconductor layer is formed on the etched barrier layer.
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公开(公告)号:US09982160B2
公开(公告)日:2018-05-29
申请号:US14419303
申请日:2013-03-01
发明人: Thomas P. Klun , Alan K. Nachtigal , Joseph C. Spagnola , Mark A. Roehrig , Jennifer K. Schnobrich , Guy D. Joly , Christopher S. Lyons
IPC分类号: C09D133/14 , C09D143/04 , C07F7/18 , H01L51/00 , H01L51/52 , H01L51/44 , H01L51/10 , B05D3/06 , B32B27/30 , C08J7/04 , B05D1/00 , B05D3/10 , C08K3/34 , C09D135/02 , C23C14/08 , C23C14/34 , C23C16/40 , C23C16/44 , C08F130/08 , C09J133/14
CPC分类号: C09D143/04 , B05D1/60 , B05D3/067 , B05D3/068 , B05D3/101 , B32B27/308 , B32B2250/04 , B32B2307/7242 , B32B2307/7244 , C07F7/1804 , C08F130/08 , C08J7/045 , C08J2333/12 , C08K3/34 , C09D133/14 , C09D135/02 , C09J133/14 , C23C14/08 , C23C14/34 , C23C16/40 , C23C16/44 , H01L51/004 , H01L51/107 , H01L51/448 , H01L51/5253 , Y10T428/1064 , Y10T428/31507 , Y10T428/31551 , Y10T428/31609 , Y10T428/31663
摘要: Urea (multi)-(meth)acrylate (multi)-silane precursor compounds, synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds, either neat or in a solvent, and optionally with a catalyst, such as a tin compound, to accelerate the reaction. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi) (meth)acrylate (multi)-silane precursor compound synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making the urea (multi)-(meth)acrylate (multi)-silanes and their use in composite films and electronic devices are described.
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公开(公告)号:US20180123075A1
公开(公告)日:2018-05-03
申请号:US15798176
申请日:2017-10-30
申请人: LG Display Co., Ltd.
发明人: BongKyu SUNG , Huiseong YU
IPC分类号: H01L51/52 , H01L27/32 , G09G3/3233 , H01L51/10
CPC分类号: H01L51/5203 , G09G3/3233 , G09G2310/0264 , H01L21/0217 , H01L27/3276 , H01L51/107 , H01L51/5253
摘要: The present disclosure provides an organic light-emitting display device including: a substrate; a first electrode configured to be disposed on the substrate; an organic layer configured to be disposed on the first electrode; a second electrode configured to be disposed on the organic layer; an anti-peeling layer configured to be disposed on the second electrode and to include an inorganic material; and a protective layer configured to be disposed on the anti-peeling layer and to include a metal oxide, and a method for manufacturing the organic light-emitting display device.
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公开(公告)号:US20180090696A1
公开(公告)日:2018-03-29
申请号:US15668244
申请日:2017-08-03
发明人: Euiyun Jang , Jeongho Hwang
CPC分类号: H01L51/0096 , H01L27/013 , H01L27/32 , H01L51/107 , H01L2251/5338 , H05K1/028 , H05K2201/10128
摘要: A display apparatus including: a substrate including a first area, a second area, and a bending area between the first area and the second area, the substrate being bent with respect to a bending axis extending in a first direction; a display disposed on the first area of the substrate; a panel driver disposed on the second area of the substrate; and a functional film disposed on the second area and the bending area of the substrate, the functional film covering the panel driver and extending to the bending area.
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公开(公告)号:US09882168B2
公开(公告)日:2018-01-30
申请号:US15375361
申请日:2016-12-12
申请人: Japan Display Inc.
发明人: Daisuke Kato
CPC分类号: H01L51/5259 , H01L51/10 , H01L51/102 , H01L51/107 , H01L51/448 , H01L51/5237 , H01L51/5243 , H01L51/5253 , H01L51/5256 , H01L51/56
摘要: Provided is a display device including a substrate having a first region and a second region adjacent to the first region. The second region is located in a direction from the first region to an outside of the substrate. The first region possesses a transistor, a leveling film over the transistor, and a light-emitting element over the leveling film and electrically connected to the transistor. The display device further includes a plurality of metal films in the second region and a sealing film. The plurality of metal films includes at least one of Group 1 metal elements and Group 2 elements, and the leveling film is arranged so as to be confined in the first region.
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公开(公告)号:US09831452B2
公开(公告)日:2017-11-28
申请号:US14282026
申请日:2014-05-20
发明人: Chulki Kim , Yeong Jun Kim , Young Mo Jung , Seong Chan Jun , Taikjin Lee , Seok Lee , Young Tae Byun , Deok Ha Woo , Sun Ho Kim , Min Ah Seo , Jae Hun Kim , Jong Chang Yi
CPC分类号: H01L51/0558 , C01B32/194 , H01L51/0012 , H01L51/002 , H01L51/0045 , H01L51/0093 , H01L51/0562 , H01L51/0583 , H01L51/107
摘要: A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.
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公开(公告)号:US09691985B2
公开(公告)日:2017-06-27
申请号:US14433083
申请日:2013-08-22
申请人: Merck Patent GmbH
CPC分类号: H01L51/004 , C08F230/08 , C08L45/00 , C08L79/085 , H01L51/0014 , H01L51/0035 , H01L51/0043 , H01L51/0541 , H01L51/0545 , H01L51/107 , H01L2251/558
摘要: The invention generally relates to passivation layers for use in organic electronic devices, and more specifically in organic field effect transistors, to processes for preparing such passivation layers, and to organic electronic devices and organic field effect transistors encompassing such passivation layers.
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公开(公告)号:US20170145249A1
公开(公告)日:2017-05-25
申请号:US15183553
申请日:2016-06-15
发明人: Wonmin Yun , Eungseok Park , Byoungduk Lee , Yunah Chung , Yoonhyeung Cho , Yongchan Ju
IPC分类号: C09D135/02 , C08F222/14 , H01L51/00 , H01L23/29 , H01L23/31
CPC分类号: C09D135/02 , C08F222/14 , C08F2222/145 , C08F2500/26 , C08F2800/20 , H01L23/293 , H01L23/3135 , H01L33/56 , H01L51/0034 , H01L51/107 , H01L51/448 , H01L51/5237
摘要: An organic film forming composition having improved hygroscopic properties (e.g., moisture-adsorbing abilities) and an electronic apparatus including a cured product of the organic film forming composition. The organic film forming composition may include a metal (meth)acrylate represented by Formula 1; and a curable material having at least two curable groups selected from the groups represented by Formulae 2A to 2D:
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