VERTICAL ORGANIC TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240414929A1

    公开(公告)日:2024-12-12

    申请号:US18397073

    申请日:2023-12-27

    Abstract: The present invention relates to a semiconductor device and a semiconductor material, and more specifically, to an organic semiconductor thin film transistor having a vertical structure, a fusion device of an optical semiconductor material, and a method of manufacturing the same, provides a vertical organic transistor including a substrate, a first electrode layer formed on the substrate, a lower charge transport layer formed on the first electrode layer, a photosensitive layer formed on the lower charge transport layer, an upper charge transport layer formed on the photosensitive layer, a second electrode layer including a base electrode formed on the upper charge transport layer, a plurality of pinholes formed in the base electrode and configured to provide a movement path of charges, and a metal oxide layer surrounding a surface of the base electrode and the pinholes, an organic active layer formed on the second electrode layer, and a third electrode layer formed on the organic active layer.

Patent Agency Ranking