公开(公告)号：US20160268510A1

公开(公告)日：2016-09-15

申请号：US15057571

申请日：2016-03-01

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Sang Jin MOON ,  Jong Cheol LEE ,  Ki Jeong KONG ,  Won Wook SO ,  Won Suk SHIN ,  Sang Kyu LEE ,  Bo Keun PARK ,  Muhammad JAHANDAR ,  Chang Eun SONG

IPC: H01L51/00 ,  H01L51/42 ,  C07F7/22 ,  C07F13/00 ,  C07F7/24 ,  H01L51/44 ,  H01L31/0256

CPC classification number: C07F7/22 ,  C07F7/24 ,  C07F13/00 ,  H01L51/424 ,  Y02E10/549

Abstract: Provided are a mixed metal halide perovskite compound, and an electronic device including the same, wherein the mixed metal halide perovskite compound includes an organic cation, two or more kinds of metal cations, and a halogen anion.

Abstract translation: 提供了一种混合金属卤化物钙钛矿化合物及其电子器件，其中混合金属卤化物钙钛矿化合物包括有机阳离子，两种或更多种金属阳离子和卤素阴离子。

公开(公告)号：US20200308342A1

公开(公告)日：2020-10-01

申请号：US16646939

申请日：2018-11-26

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Chang Eun SONG ,  Won Suk SHIN ,  Sang Jin MOON ,  Jong Cheol LEE ,  Sang Kyu LEE ,  Hang Ken LEE ,  Vu Van DOAN ,  Shafket RASOOL

IPC: C08G61/12

Abstract: The present invention relates to a polar functional group-partially introduced polymer, a preparation method therefor, and an organic electronic element adopting the same. The organic electronic element of the present invention has excellent photoelectric conversion efficiency and stability and is very advantageous in commercialization, by adopting the polar functional group-partially introduced polymer of the present invention.

公开(公告)号：US20240414929A1

公开(公告)日：2024-12-12

申请号：US18397073

申请日：2023-12-27

Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE ,  KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Won Suk SHIN ,  Hang Ken LEE ,  Chang Eun SONG ,  Kyung Geun LIM ,  Su Hyeon LEE

IPC: H10K30/82 ,  H10K30/40

Abstract: The present invention relates to a semiconductor device and a semiconductor material, and more specifically, to an organic semiconductor thin film transistor having a vertical structure, a fusion device of an optical semiconductor material, and a method of manufacturing the same, provides a vertical organic transistor including a substrate, a first electrode layer formed on the substrate, a lower charge transport layer formed on the first electrode layer, a photosensitive layer formed on the lower charge transport layer, an upper charge transport layer formed on the photosensitive layer, a second electrode layer including a base electrode formed on the upper charge transport layer, a plurality of pinholes formed in the base electrode and configured to provide a movement path of charges, and a metal oxide layer surrounding a surface of the base electrode and the pinholes, an organic active layer formed on the second electrode layer, and a third electrode layer formed on the organic active layer.