公开(公告)号：US20210296575A1

公开(公告)日：2021-09-23

申请号：US17088850

申请日：2020-11-04

Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

Inventor： Young Keun KIM ,  Yong Jin KIM ,  Min Hyeok LEE

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

Abstract: A magnetic device includes a pinned layer having a fixed magnetization direction, a free layer having a switched magnetization direction, a tunnel insulating layer interposed between the pinned layer and the free layer, and a spin-torque generation layer injecting spin current into the free layer as in-plane current flows. The spin current allows a magnetization direction of the free layer to be switched by a spin-orbit torque. The pinned layer and the free layer have perpendicular magnetic anisotropy. The spin-torque generation layer includes a tungsten layer and a tungsten-nitride layer sequentially stacked. The tungsten-nitride layer is disposed adjacent to the free layer.