公开(公告)号：US20250136515A1

公开(公告)日：2025-05-01

申请号：US18888637

申请日：2024-09-18

Applicant: KSM COMPONENT CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Hwan Young PARK ,  Bo Sung KIM ,  Hyun Taek LEE

IPC: C04B35/103 ,  C04B35/638 ,  C04B35/64 ,  H01L21/687

Abstract: A ceramic susceptor particularly with excellent volumetric resistance at high temperatures and thermal conductivity at room temperature compared to a typical ceramic susceptor and a method for manufacturing the same are disclosed. The ceramic susceptor is characterized by comprising alumina (Al2O3); and aluminum nitride (AlN), and not comprising a secondary phase including an aluminum oxynitride phase (AlON phase).

公开(公告)号：US20240430989A1

公开(公告)日：2024-12-26

申请号：US18703474

申请日：2022-11-16

Applicant: KSM COMPONENT CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Hwan Young PARK ,  Bo Sung KIM

IPC: H05B3/26 ,  C04B35/581

Abstract: Disclosed is a ceramic heater for a semiconductor manufacturing apparatus, the ceramic heater having volume resistivity especially at high temperature and thermal conductivity at room temperature that are superior to those of a normal ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes a ceramic substrate including a) aluminum nitride (AIN), b) any one or more among magnesium oxide (MgO), alumina (Al2O3) and spinel (MgAl2O4), c) calcium oxide (CaO) and d) titanium dioxide (TiO2); and a resistive heating element.

公开(公告)号：US20210285104A1

公开(公告)日：2021-09-16

申请号：US17258071

申请日：2019-07-03

Applicant: KSM COMPONENT CO., LTD.

Inventor： Joo Hwan KIM

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/505

Abstract: A shower head for a chemical vapor deposition system and a chemical vapor deposition device including the shower head are disclosed. The shower head includes a chamber; a process gas inlet for the chamber; a second gas distributor plate provided at the bottom of the chamber; and a first gas distributor plate stacked on the upper surface of the second gas distributor plate, wherein the first gas distributor plate includes multiple gas distribution holes, the second gas distributor plate includes multiple gas injection holes, and a distribution channel is arranged at the boundary surface between the first gas distributor plate and the second gas distributor plate so as to distribute a process gas, introduced through each gas distribution hole of the first gas distributor plate, to 2 to 8 gas injection holes of the second gas distributor plate.

公开(公告)号：US20210249260A1

公开(公告)日：2021-08-12

申请号：US16973112

申请日：2019-10-31

Applicant: KSM COMPONENT CO., LTD. ,  FLOWSERVE KSM CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM ,  Ki Ryong LEE

IPC: H01L21/02

Abstract: Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.

公开(公告)号：US20200219747A1

公开(公告)日：2020-07-09

申请号：US16629709

申请日：2018-05-15

Applicant: KSM COMPONENT CO., LTD.

Inventor： Yun Ho KIM ,  Joo Hwan KIM

IPC: H01L21/683 ,  C04B35/581 ,  C04B35/626 ,  C04B35/645

Abstract: One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.