ACOUSTIC WAVE DEVICE, MULTIPLEXER, AND COMMUNICATION APPARATUS

    公开(公告)号:US20220271729A1

    公开(公告)日:2022-08-25

    申请号:US17744353

    申请日:2022-05-13

    IPC分类号: H03H9/02 H04B1/00

    摘要: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is “p”.

    ACOUSTIC WAVE DEVICE, MULTIPLEXER, AND COMMUNICATION APPARATUS

    公开(公告)号:US20210083644A1

    公开(公告)日:2021-03-18

    申请号:US16629900

    申请日:2018-07-27

    IPC分类号: H03H9/02 H04B1/00

    摘要: An acoustic wave device includes a substrate 3, a multilayer film 5 on the substrate 3, an LT layer 7 which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode 19 on the LT layer 7. In the multilayer film 7, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer 7 from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer 7 is negative, and a thickness of the LT layer 7 is less than 2 p where a pitch of electrode fingers in the IDT electrode 19 is “p”.

    ACOUSTIC WAVE DEVICE, MULTIPLEXER, AND COMMUNICATION APPARATUS

    公开(公告)号:US20210036679A1

    公开(公告)日:2021-02-04

    申请号:US16626832

    申请日:2018-07-02

    摘要: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3λ or less where λ is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0°±20°, −5° to 65°, 0°±10°), (−120°±20°, −5° to 65°, 0°±10°), or (120°±20°, −5° to 65°, 0°±10°). The multilayer film is configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO2. The second layer is comprised of any one of Ta2O5, HfO2, ZrO2, TiO2, and MgO.

    ACOUSTIC WAVE DEVICE AND COMMUNICATION APPARATUS

    公开(公告)号:US20220263491A1

    公开(公告)日:2022-08-18

    申请号:US17630649

    申请日:2020-07-14

    发明人: Motoki ITO

    IPC分类号: H03H9/13 H03H9/15 H03H9/56

    摘要: An acoustic wave device includes a substrate, a multilayer film disposed on the substrate, a piezoelectric film disposed on the multilayer film, and a first excitation electrode and a second excitation electrode disposed on the piezoelectric film. The first excitation electrode has a plurality of first electrode fingers arranged with a first pitch p1 in a propagation direction of an acoustic wave. The second excitation electrode has a plurality of second electrode fingers arranged with a second pitch p2 in the propagation direction. The piezoelectric film is formed of a single crystal of LiTaO3 or a single crystal of LiNbO3. When t0 represents a thickness of the piezoelectric film, 1.15×p1≤p2, t0≤0.48×p1, and t0≥0.27×p2 are satisfied.

    ACOUSTIC WAVE FILTER, MULTIPLEXER, AND COMMUNICATION APPARATUS

    公开(公告)号:US20210006227A1

    公开(公告)日:2021-01-07

    申请号:US16954837

    申请日:2018-12-17

    摘要: A filter body includes a serial arm and one or more parallel resonators in a state where they are connected in a ladder shape. The serial arm includes a plurality of serial resonators connected in series to each other. A difference of resonance frequencies among the plurality of serial resonators is smaller than a half of a difference between the resonance frequency and an antiresonance frequency of each serial resonator. The serial arm includes a first divided arm which extends from one side toward the other side in a predetermined direction on the piezoelectric substrate, and a second divided arm which is folded back from the other side of the first divided arm and extends toward the one side. The shield conductor includes a portion which is located between at least one of the serial resonators included in the first divided arm and at least one of the serial resonators included in the second divided arm.

    ELASTIC WAVE DEVICE AND COMMUNICATION DEVICE

    公开(公告)号:US20230336154A1

    公开(公告)日:2023-10-19

    申请号:US18010681

    申请日:2021-06-22

    发明人: Motoki ITO

    IPC分类号: H03H9/17 H03H9/13

    CPC分类号: H03H9/171 H03H9/132

    摘要: An acoustic wave device includes a composite substrate and an excitation electrode located on an upper surface of the composite substrate. The composite substrate includes a support substrate, a multilayer film, and a piezoelectric film overlapping the upper surface of the multilayer film. The multilayer film includes a plurality of acoustic films stacked on an upper surface of the support substrate. Adjacent ones of the acoustic films in a direction in which the acoustic films are stacked are made of different materials. The excitation electrode is located on an upper surface of the piezoelectric film. A side surface of the composite substrate includes a step portion. The step portion has a step-like shape with two or more steps ascending from the support substrate side to the piezoelectric film side in a direction from an outside to an inside with respect to the side surface.

    ACOUSTIC WAVE FILTER AND COMMUNICATION APPARATUS

    公开(公告)号:US20220345112A1

    公开(公告)日:2022-10-27

    申请号:US17762452

    申请日:2020-09-25

    发明人: Motoki ITO

    IPC分类号: H03H9/64 H03H9/05 H03H9/10

    摘要: An acoustic wave filter includes a first chip and a second chip electrically connected to the first chip. Each of the chips includes a support substrate, a plurality of acoustic films, a piezoelectric film, and an excitation electrode sequentially stacked on one another. The plurality of acoustic films are sequentially stacked on the support substrate and materials for acoustic films stacked on each other are different from each other.

    ACOUSTIC WAVE DEVICE AND COMMUNICATION APPARATUS

    公开(公告)号:US20200304098A1

    公开(公告)日:2020-09-24

    申请号:US16646913

    申请日:2018-09-11

    发明人: Motoki ITO

    IPC分类号: H03H9/05 H03H9/25 H01L41/047

    摘要: A SAW device includes a mounting substrate including a mounting surface, a SAW chip mounted on the mounting surface, a dummy chip mounted on the mounting surface, and a resin part covering the acoustic wave chip and the dummy chip. The dummy chip includes an insulating dummy substrate, and one or more dummy terminals which are located on a surface of the dummy substrate on the mounting surface side and are bonded to the mounting surface. The dummy chip configures an open end when electrically viewed from the mounting substrate side.