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公开(公告)号:US20220271729A1
公开(公告)日:2022-08-25
申请号:US17744353
申请日:2022-05-13
申请人: KYOCERA Corporation
发明人: Motoki ITO , Tetsuya KISHINO
摘要: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode on the LT layer. In the multilayer film, a differential value obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer is negative, and a thickness of the LT layer is less than p and a thickness of the multilayer film is less than p where a pitch of electrode fingers in the IDT electrode is “p”.
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公开(公告)号:US20240356522A1
公开(公告)日:2024-10-24
申请号:US18687518
申请日:2022-08-31
申请人: KYOCERA Corporation
发明人: Motoki ITO
CPC分类号: H03H9/14544 , H03H9/02559 , H03H9/02574 , H03H9/02637 , H03H9/02866 , H03H9/25 , H03H9/6483 , H03H9/725
摘要: An acoustic wave device includes a piezoelectric layer made of a piezoelectric crystal and an interdigital transducer (IDT) electrode on an upper surface of the piezoelectric layer. The IDT electrode includes multiple electrode fingers. A normalized thickness D1/p of the piezoelectric layer and a duty d of the IDT electrode have a relationship expressed by 0.166≤d×D1/p≤0.241 . . . (1), where p is a repetition interval between centers of the multiple electrode fingers, and D1 is a thickness of the piezoelectric layer.
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公开(公告)号:US20210083644A1
公开(公告)日:2021-03-18
申请号:US16629900
申请日:2018-07-27
申请人: KYOCERA Corporation
发明人: Motoki ITO , Tetsuya KISHINO
摘要: An acoustic wave device includes a substrate 3, a multilayer film 5 on the substrate 3, an LT layer 7 which is located on the multilayer film and is configured by a single crystal of LiTaO3, and an IDT electrode 19 on the LT layer 7. In the multilayer film 7, a differential value D obtained by subtracting a total value of values each obtained by multiplying a density and thickness of a film having a slower acoustic velocity than a transverse wave acoustic velocity of the LT layer 7 from a total value of values each obtained by multiplying a density and thickness of a film having a faster acoustic velocity than the transverse wave acoustic velocity of the LT layer 7 is negative, and a thickness of the LT layer 7 is less than 2 p where a pitch of electrode fingers in the IDT electrode 19 is “p”.
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公开(公告)号:US20210036679A1
公开(公告)日:2021-02-04
申请号:US16626832
申请日:2018-07-02
申请人: KYOCERA Corporation
发明人: Tetsuya KISHINO , Soichiro NOZOE , Motoki ITO
摘要: An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3λ or less where λ is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0°±20°, −5° to 65°, 0°±10°), (−120°±20°, −5° to 65°, 0°±10°), or (120°±20°, −5° to 65°, 0°±10°). The multilayer film is configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO2. The second layer is comprised of any one of Ta2O5, HfO2, ZrO2, TiO2, and MgO.
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公开(公告)号:US20220263491A1
公开(公告)日:2022-08-18
申请号:US17630649
申请日:2020-07-14
申请人: KYOCERA Corporation
发明人: Motoki ITO
摘要: An acoustic wave device includes a substrate, a multilayer film disposed on the substrate, a piezoelectric film disposed on the multilayer film, and a first excitation electrode and a second excitation electrode disposed on the piezoelectric film. The first excitation electrode has a plurality of first electrode fingers arranged with a first pitch p1 in a propagation direction of an acoustic wave. The second excitation electrode has a plurality of second electrode fingers arranged with a second pitch p2 in the propagation direction. The piezoelectric film is formed of a single crystal of LiTaO3 or a single crystal of LiNbO3. When t0 represents a thickness of the piezoelectric film, 1.15×p1≤p2, t0≤0.48×p1, and t0≥0.27×p2 are satisfied.
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公开(公告)号:US20210006227A1
公开(公告)日:2021-01-07
申请号:US16954837
申请日:2018-12-17
申请人: KYOCERA Corporation
摘要: A filter body includes a serial arm and one or more parallel resonators in a state where they are connected in a ladder shape. The serial arm includes a plurality of serial resonators connected in series to each other. A difference of resonance frequencies among the plurality of serial resonators is smaller than a half of a difference between the resonance frequency and an antiresonance frequency of each serial resonator. The serial arm includes a first divided arm which extends from one side toward the other side in a predetermined direction on the piezoelectric substrate, and a second divided arm which is folded back from the other side of the first divided arm and extends toward the one side. The shield conductor includes a portion which is located between at least one of the serial resonators included in the first divided arm and at least one of the serial resonators included in the second divided arm.
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公开(公告)号:US20190036554A1
公开(公告)日:2019-01-31
申请号:US16072585
申请日:2017-01-27
申请人: KYOCERA Corporation
发明人: Motoki ITO , Tetsuya KISHINO , Tsuyoshi NAKAI
CPC分类号: H04B1/0057 , H03H9/02559 , H03H9/02637 , H03H9/02685 , H03H9/02929 , H03H9/14582 , H03H9/25 , H03H9/6483 , H03H9/725
摘要: An SAW resonator includes a piezoelectric substrate, an IDT electrode, and a pair of reflectors. The IDT electrode includes pluralities of electrode fingers which are aligned on the piezoelectric substrate in a direction of propagation of a SAW. The pair of reflectors are located on the two sides of the pluralities of electrode fingers on the piezoelectric substrate in the direction of propagation. The IDT electrode includes a plurality of areas which includes pluralities of electrode fingers distributed to them and have different resonance frequencies from each other. The plurality of areas include at least three areas. The second highest resonance frequency among all areas is lower than an intermediate value between the lowest resonance frequency among all areas and the highest resonance frequency among all areas.
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公开(公告)号:US20230336154A1
公开(公告)日:2023-10-19
申请号:US18010681
申请日:2021-06-22
申请人: KYOCERA Corporation
发明人: Motoki ITO
摘要: An acoustic wave device includes a composite substrate and an excitation electrode located on an upper surface of the composite substrate. The composite substrate includes a support substrate, a multilayer film, and a piezoelectric film overlapping the upper surface of the multilayer film. The multilayer film includes a plurality of acoustic films stacked on an upper surface of the support substrate. Adjacent ones of the acoustic films in a direction in which the acoustic films are stacked are made of different materials. The excitation electrode is located on an upper surface of the piezoelectric film. A side surface of the composite substrate includes a step portion. The step portion has a step-like shape with two or more steps ascending from the support substrate side to the piezoelectric film side in a direction from an outside to an inside with respect to the side surface.
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公开(公告)号:US20220345112A1
公开(公告)日:2022-10-27
申请号:US17762452
申请日:2020-09-25
申请人: KYOCERA Corporation
发明人: Motoki ITO
摘要: An acoustic wave filter includes a first chip and a second chip electrically connected to the first chip. Each of the chips includes a support substrate, a plurality of acoustic films, a piezoelectric film, and an excitation electrode sequentially stacked on one another. The plurality of acoustic films are sequentially stacked on the support substrate and materials for acoustic films stacked on each other are different from each other.
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公开(公告)号:US20200304098A1
公开(公告)日:2020-09-24
申请号:US16646913
申请日:2018-09-11
申请人: KYOCERA Corporation
发明人: Motoki ITO
IPC分类号: H03H9/05 , H03H9/25 , H01L41/047
摘要: A SAW device includes a mounting substrate including a mounting surface, a SAW chip mounted on the mounting surface, a dummy chip mounted on the mounting surface, and a resin part covering the acoustic wave chip and the dummy chip. The dummy chip includes an insulating dummy substrate, and one or more dummy terminals which are located on a surface of the dummy substrate on the mounting surface side and are bonded to the mounting surface. The dummy chip configures an open end when electrically viewed from the mounting substrate side.
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