公开(公告)号：US20220181123A1

公开(公告)日：2022-06-09

申请号：US17605967

申请日：2020-04-20

申请人： KYOCERA Corporation

发明人： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC分类号： H01J37/32 ,  C01F17/218 ,  C23C14/34 ,  C23C14/08

摘要： A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

公开(公告)号：US20210020415A1

公开(公告)日：2021-01-21

申请号：US17043908

申请日：2019-04-03

申请人： KYOCERA Corporation ,  Toshiba Materials Co., Ltd.

发明人： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC分类号： H01J37/32 ,  C23C14/08

摘要： A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.

公开(公告)号：US20220325399A1

公开(公告)日：2022-10-13

申请号：US17764141

申请日：2020-09-29

申请人： KYOCERA Corporation

发明人： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC分类号： C23C14/08 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

摘要： A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio σ22/σ11 of a compressive stress σ11 to occur across a surface of the film to be exposed to plasma and a compressive stress σ22 to occur across the surface in a direction perpendicular to the compressive stress σ11 is 5 or less. A plasma processing apparatus includes the above component.

公开(公告)号：US20210381094A1

公开(公告)日：2021-12-09

申请号：US17407668

申请日：2021-08-20

申请人： KYOCERA Corporation

发明人： Takashi HINO ,  Tetsuo INOUE ,  Shuichi SAITO

IPC分类号： C23C14/08 ,  H01L21/3065

摘要： A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

公开(公告)号：US20210118686A1

公开(公告)日：2021-04-22

申请号：US17043902

申请日：2019-04-03

申请人： KYOCERA Corporation

发明人： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC分类号： H01L21/3065 ,  H01L21/02 ,  C23C16/455

摘要： A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.