专利检索 ap:("KYOCERA Corporation") AND inv:"Tetsuo INOUE" 第 1 页

1.

发明申请
COMPONENT AND SEMICONDUCTOR MANUFACTURING DEVICE 有权

公开(公告)号：US20210381094A1

公开(公告)日：2021-12-09

申请号：US17407668

申请日：2021-08-20

申请人： KYOCERA Corporation

发明人： Takashi HINO , Tetsuo INOUE , Shuichi SAITO

IPC分类号： C23C14/08 , H01L21/3065

摘要： A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.