公开(公告)号：US08786303B2

公开(公告)日：2014-07-22

申请号：US12858673

申请日：2010-08-18

申请人： Kab Yong Kim ,  Hyun Soon Jang ,  Yong Hwan Jeong

发明人： Kab Yong Kim ,  Hyun Soon Jang ,  Yong Hwan Jeong

IPC分类号： G01R1/067 ,  G01R31/28

CPC分类号： G01R31/2891 ,  G01R31/2884

摘要： A semiconductor device includes a plurality of sensor pads configured to receive a probe signal from a testing apparatus, and a plurality of normal pads configured to receive a driving signal to drive the semiconductor device. In the plurality of sensor pads and the plurality of normal pads, a length in a direction corresponding to one of progress directions of a plurality of needles of the testing apparatus is longer than a length in another progress direction of the plurality of needles.

摘要翻译： 半导体器件包括被配置为从测试装置接收探测信号的多个传感器焊盘以及被配置为接收驱动信号以驱动半导体器件的多个正常焊盘。 在多个传感器焊盘和多个正常焊盘中，与测试装置的多个针的进给方向之一相对应的方向上的长度比多个针的另一个进给方向上的长度长。

公开(公告)号：US20110043235A1

公开(公告)日：2011-02-24

申请号：US12858673

申请日：2010-08-18

申请人： Kab Yong Kim ,  Hyun Soon Jang ,  Yong Hwan Jeong

发明人： Kab Yong Kim ,  Hyun Soon Jang ,  Yong Hwan Jeong

IPC分类号： G01R1/067

CPC分类号： G01R31/2891 ,  G01R31/2884

摘要： A semiconductor device includes a plurality of sensor pads configured to receive a probe signal from a testing apparatus, and a plurality of normal pads configured to receive a driving signal to drive the semiconductor device. In the plurality of sensor pads and the plurality of normal pads, a length in a direction corresponding to one of progress directions of a plurality of needles of the testing apparatus is longer than a length in another progress direction of the plurality of needles.

摘要翻译： 半导体器件包括被配置为从测试装置接收探测信号的多个传感器焊盘以及被配置为接收驱动信号以驱动半导体器件的多个正常焊盘。 在多个传感器焊盘和多个正常焊盘中，与测试装置的多个针的进给方向之一相对应的方向上的长度长于多个针的另一个进给方向上的长度。

公开(公告)号：US06281745B1

公开(公告)日：2001-08-28

申请号：US09511848

申请日：2000-02-23

申请人： Jae Hoon Kim ,  Hyun Soon Jang ,  Hoon Ryu

发明人： Jae Hoon Kim ,  Hyun Soon Jang ,  Hoon Ryu

IPC分类号： G05F302

CPC分类号： G05F1/465

摘要： A flexible internal power supply voltage generating circuit of a semiconductor memory device includes a step-down circuit and a selection circuit. The selection circuit selects the step-down circuit for use when the semiconductor device uses a high external power supply voltage but bypasses the step-down circuit for a low external power supply voltage. One such circuit additionally includes a power supply terminal and a control circuit. The power supply terminal receives an external power supply voltage. The control circuit compares a feedback internal power supply voltage with a reference voltage at the time of driving a word line and then generates a control voltage signal for controlling a DIP of an internal power supply voltage caused by driving the word line. A selection circuit selectively connects a high voltage node or a low voltage node to the power supply terminal according to the external power supply voltage. The step-down circuit connects to the high voltage node and reduces the external power supply voltage when the power supply terminal receives the high supply voltage. The driver is between a common connection point of the step-down circuit and the low voltage node and an internal circuit and drives the external power supply voltage in the internal circuit in response to the control signal. Accordingly, when a high voltage is applied, the high voltage is stepped down and provided to the driver, thereby controlling a reverse overshoot of the internal power supply voltage.

摘要翻译： 半导体存储器件的柔性内部电源电压产生电路包括降压电路和选择电路。 选择电路选择半导体器件使用高外部电源电压时使用的降压电路，但是为了低的外部电源电压而绕过降压电路。 一个这样的电路还包括电源端子和控制电路。 电源端子接收外部电源电压。 控制电路将反馈内部电源电压与驱动字线时的参考电压进行比较，然后生成用于控制由驱动字线引起的内部电源电压的DIP的控制电压信号。 选择电路根据外部电源电压选择性地将高压节点或低压节点连接到电源端子。 当电源端子接收到高电源电压时，降压电路连接到高压节点并降低外部电源电压。 驱动器在降压电路的公共连接点和低电压节点之间以及内部电路之间，响应于控制信号驱动内部电路中的外部电源电压。 因此，当施加高电压时，高压被降低并提供给驱动器，从而控制内部电源电压的反向过冲。