公开(公告)号：US20010002047A1

公开(公告)日：2001-05-31

申请号：US09761582

申请日：2001-01-18

申请人： Kabushiki Kaisha Toshiba

发明人： Mitsuaki Suzuki ,  Shinichi Kamagami ,  Takuji Nakazono

IPC分类号： H01L027/12 ,  H01L021/00 ,  H01L021/84

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78609

摘要： A thin film transistor of this invention has a structure obtained by sequentially stacking, on an insulating substrate, a silicon nitride film, a silicon oxide film, a polysilicon thin film with a channel region and source and drain regions facing each other via the channel region, an insulating film, and a gate electrode. The boron concentration decreases from the channel region toward the silicon nitride film in the silicon oxide film region between the channel region and the silicon nitride film. The silicon oxide film region between the channel region and the silicon nitride film is made up of a first region which is in contact with the channel region and has a boron concentration of 1null1016 atoms/cm3 or more, and a second region between the first region and the silicon nitride film, which has a boron concentration of less than 1null1016 atoms/cm3. The first region has a thickness of 200 null or less.

摘要翻译： 本发明的薄膜晶体管具有以下结构：在绝缘基板上依次层叠氮化硅膜，氧化硅膜，具有沟道区域的多晶硅薄膜，以及经由沟道区域彼此相对的源极和漏极区域 ，绝缘膜和栅电极。 在沟道区域和氮化硅膜之间的氧化硅膜区域中，硼浓度从沟道区域朝向氮化硅膜减少。 沟道区域和氮化硅膜之间的氧化硅膜区域由与沟道区域接触并具有1×10 16原子/ cm 3以上的硼浓度的第一区域和第一区域之间的第二区域构成， 和硼浓度小于1×10 16原子/ cm 3的氮化硅膜。 第一区域的厚度为200埃以下。