公开(公告)号：US08493075B2

公开(公告)日：2013-07-23

申请号：US12877159

申请日：2010-09-08

申请人： Kai D. Feng ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Kai D. Feng ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： G01R31/00

CPC分类号： H03K19/00369

摘要： An embedded decoupling capacitor wearout monitor for power transmission line, which can be integrated and fabricated in any standard CMOS or BiCMOS circuits. The embedded noise monitor is employed to detect the degraded capacitor and disable it from further operation, which will extend the operation lifetime of the circuit system and prevent subsequent catastrophic failure as a result of hard-breakdown (or capacitor short). In one aspect, the monitor circuit and method detects early degradation signal before catastrophic decoupling capacitor failure and, further can pin-point a degraded decoupling capacitor and disable it, avoiding impact from decoupling capacitor breakdown failure. The monitor circuit and method provides for decoupling capacitor redundancy and includes an embedded and self-diagnostic circuit for functionality and reliability.

摘要翻译： 用于输电线路的嵌入式去耦电容器损耗监测器，可以在任何标准CMOS或BiCMOS电路中集成和制造。 嵌入式噪声监测器用于检测劣化的电容器，并禁止其进一步操作，这将延长电路系统的工作寿命，并防止由于硬击穿（或电容器短路）引起的灾难性故障。 在一个方面，监测电路和方法在灾难性去耦电容器故障之前检测早期劣化信号，并且还可以对劣化的去耦电容进行引脚定位并使其失效，避免去耦电容器击穿故障的影响。 监控电路和方法提供了去耦电容冗余，并且包括用于功能和可靠性的嵌入式和自诊断电路。

公开(公告)号：US20120056667A1

公开(公告)日：2012-03-08

申请号：US12877159

申请日：2010-09-08

申请人： Kai D. Feng ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Kai D. Feng ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H03K5/00

CPC分类号： H03K19/00369

摘要： An embedded decoupling capacitor wearout monitor for power transmission line, which can be integrated and fabricated in any standard CMOS or BiCMOS circuits. The embedded noise monitor is employed to detect the degraded capacitor and disable it from further operation, which will extend the operation lifetime of the circuit system and prevent subsequent catastrophic failure as a result of hard-breakdown (or capacitor short). In one aspect, the monitor circuit and method detects early degradation signal before catastrophic decoupling capacitor failure and, further can pin-point a degraded decoupling capacitor and disable it, avoiding impact from decoupling capacitor breakdown failure. The monitor circuit and method provides for decoupling capacitor redundancy and includes an embedded and self-diagnostic circuit for functionality and reliability.

摘要翻译： 用于输电线路的嵌入式去耦电容器损耗监测器，可以在任何标准CMOS或BiCMOS电路中集成和制造。 嵌入式噪声监测器用于检测劣化的电容器，并禁止其进一步操作，这将延长电路系统的工作寿命，并防止由于硬击穿（或电容器短路）引起的灾难性故障。 在一个方面，监测电路和方法在灾难性去耦电容器故障之前检测早期劣化信号，并且还可以对劣化的去耦电容进行引脚定位并使其失效，避免去耦电容器击穿故障的影响。 监控电路和方法提供了去耦电容冗余，并且包括用于功能和可靠性的嵌入式和自诊断电路。

公开(公告)号：US07545161B2

公开(公告)日：2009-06-09

申请号：US11832796

申请日：2007-08-02

申请人： Louis Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Louis Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： G01R31/02

CPC分类号： G01R31/2621

摘要： An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.

摘要翻译： 用于定量测量MOSFET的阈值电压偏移的片上电路。 该电路包括可编程Vt参考传感器; 可编程Vt监控传感器; 以及比较器，用于从提供输出标志信号的参考和监视传感器接收输入。 MOSFET器件电压阈值的偏移可以监视工艺变化，几何感应，等离子体损伤，应力和热载体以及其他器件损坏。 相同的电路还测量集成电路芯片或晶片中的任何两个节点之间的电压差。

公开(公告)号：US20100327958A1

公开(公告)日：2010-12-30

申请号：US12494460

申请日：2009-06-30

申请人： Jong-Ru Guo ,  Louis Lu-Chen Hsu ,  Rajiv Vasant Joshi ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Jong-Ru Guo ,  Louis Lu-Chen Hsu ,  Rajiv Vasant Joshi ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H03K3/01 ,  G01R31/26

CPC分类号： H03K17/0822

摘要： A dormant mode target semiconductor device within a leakage current target unit is identified for mitigating leakage current to prevent it from reaching catastrophic runaway. A leakage current shift monitor unit is electrically connected to the output node of the leakage current target unit and collects leakage current from the selected target semiconductor device for two consecutive predefined temporal periods and measures the difference between the collected leakage currents. A comparator receives and compares the outputs of the current shift monitor unit and a reference voltage generator. The comparator propagates an alert signal to the leakage current target unit when the leakage voltage output from the leakage current shift monitor unit exceeds the reference voltage, a condition that indicates that the leakage current is about to approach catastrophic runaway levels. This alert signal switches the target semiconductor device to an active mode for leakage mitigation, which includes a repair voltage from a repair voltage generator applied to the gate of the target semiconductor device.

摘要翻译： 识别泄漏电流目标单元内的休眠模式目标半导体器件，以减轻漏电流，防止其达到灾难性的失控。 泄漏电流移动监视器单元电连接到泄漏电流目标单元的输出节点，并在两个连续的预定义时间周期内从所选择的目标半导体器件收集泄漏电流，并测量所收集的漏电流之间的差异。 比较器接收并比较当前移位监视器单元和参考电压发生器的输出。 当从泄漏电流移动监视器单元输出的泄漏电压超过参考电压时，比较器将报警信号传播到泄漏电流目标单元，表示泄漏电流即将接近灾难性失控水平的条件。 该警报信号将目标半导体器件切换到用于泄漏减轻的活动模式，其包括施加到目标半导体器件的栅极的修复​​电压发生器的修复电压。

公开(公告)号：US08115575B2

公开(公告)日：2012-02-14

申请号：US12191519

申请日：2008-08-14

申请人： Louis Lu-Chen Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Louis Lu-Chen Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H03H11/00

CPC分类号： H03H11/08 ,  H03H11/48

摘要： An apparatus and method for manufacturing low-cost high-density compact active inductor module using existing DRAM, SRAM and logic process integration. The elements of the active inductor modules are formed by three semiconductor devices including nMOS devices, deep-trench capacitors and a polysilicon or TaN resistor. The active inductor modules can be connected in a parallel and/or serial configuration to obtain a wide range of inductance values. The modular active inductors can be advantageously stored in an ASIC library to facilitate a flexible and convenient circuit design.

摘要翻译： 一种使用现有DRAM，SRAM和逻辑处理集成制造低成本高密度紧凑型有源电感模块的装置和方法。 有源电感器模块的元件由包括nMOS器件，深沟槽电容器和多晶硅或TaN电阻器的三个半导体器件形成。 有源电感模块可以并联和/或串联配置连接，以获得宽范围的电感值。 模块化有源电感器可以有利地存储在ASIC库中，以便于灵活和方便的电路设计。

公开(公告)号：US07911263B2

公开(公告)日：2011-03-22

申请号：US12494460

申请日：2009-06-30

申请人： Jong-Ru Guo ,  Louis Lu-Chen Hsu ,  Rajiv Vasant Joshi ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Jong-Ru Guo ,  Louis Lu-Chen Hsu ,  Rajiv Vasant Joshi ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： G05F1/10 ,  G01R31/26

CPC分类号： H03K17/0822

摘要： A dormant mode target semiconductor device within a leakage current target unit is identified for mitigating leakage current to prevent it from reaching catastrophic runaway. A leakage current shift monitor unit is electrically connected to the output node of the leakage current target unit and collects leakage current from the selected target semiconductor device for two consecutive predefined temporal periods and measures the difference between the collected leakage currents. A comparator receives and compares the outputs of the current shift monitor unit and a reference voltage generator. The comparator propagates an alert signal to the leakage current target unit when the leakage voltage output from the leakage current shift monitor unit exceeds the reference voltage, a condition that indicates that the leakage current is about to approach catastrophic runaway levels. This alert signal switches the target semiconductor device to an active mode for leakage mitigation, which includes a repair voltage from a repair voltage generator applied to the gate of the target semiconductor device.

摘要翻译： 识别泄漏电流目标单元内的休眠模式目标半导体器件，以减轻漏电流，防止其达到灾难性的失控。 泄漏电流移动监视器单元电连接到泄漏电流目标单元的输出节点，并在两个连续的预定义时间周期内从所选择的目标半导体器件收集泄漏电流，并测量所收集的漏电流之间的差异。 比较器接收并比较当前移位监视器单元和参考电压发生器的输出。 当从泄漏电流移动监视器单元输出的泄漏电压超过参考电压时，比较器将报警信号传播到泄漏电流目标单元，表示泄漏电流即将接近灾难性失控水平的条件。 该警报信号将目标半导体器件切换到用于泄漏减轻的活动模式，其包括施加到目标半导体器件的栅极的修复​​电压发生器的修复电压。

公开(公告)号：US07821330B2

公开(公告)日：2010-10-26

申请号：US12045974

申请日：2008-03-11

申请人： Ping-Chuan Wang ,  Jong-ru Guo ,  Louis L. Hsu ,  Zhijian Yang

发明人： Ping-Chuan Wang ,  Jong-ru Guo ,  Louis L. Hsu ,  Zhijian Yang

IPC分类号： G05F1/10

CPC分类号： G05F1/56

摘要： A circuit and a method for extending the lifetime of a semiconductor chip. The circuit including a voltage reference generator, a voltage switch, a threshold voltage regulator device and a threshold voltage monitor device tunes an automatic internal power supply. The voltage reference generator provides one or more reference voltage levels that are transmitted to the voltage switch. The threshold voltage monitor device monitors the threshold voltage of the device, triggering the voltage switch to select a reference level for use as a voltage reference for the regulator when the threshold voltage of the monitored device exceeds a predetermined value. The regulator then converts the external power supply to an internal supply and holds it at the predetermined reference level.

摘要翻译： 一种用于延长半导体芯片寿命的电路和方法。 包括电压基准发生器，电压开关，阈值电压调节器装置和阈值电压监视器装置的电路调谐自动内部电源。 电压参考发生器提供一个或多个传输到电压开关的参考电压电平。 阈值电压监视器件监视器件的阈值电压，当被监视器件的阈值电压超过预定值时，触发电压开关选择参考电平，以用作调节器的电压基准。 调节器然后将外部电源转换为内部电源并将其保持在预定的参考电平。

公开(公告)号：US20100039191A1

公开(公告)日：2010-02-18

申请号：US12191519

申请日：2008-08-14

申请人： Louis Lu-Chen Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Louis Lu-Chen Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： H03H11/48

CPC分类号： H03H11/08 ,  H03H11/48

摘要： An apparatus and method for manufacturing low-cost high-density compact active inductor module using existing DRAM, SRAM and logic process integration. The elements of the active inductor modules are formed by three semiconductor devices including nMOS devices, deep-trench capacitors and a polysilicon or TaN resistor. The active inductor modules can be connected in a parallel and/or serial configuration to obtain a wide range of inductance values. The modular active inductors can be advantageously stored in an ASIC library to facilitate a flexible and convenient circuit design.

摘要翻译： 一种使用现有DRAM，SRAM和逻辑处理集成制造低成本高密度紧凑型有源电感模块的装置和方法。 有源电感器模块的元件由包括nMOS器件，深沟槽电容器和多晶硅或TaN电阻器的三个半导体器件形成。 有源电感模块可以并联和/或串联配置连接，以获得宽范围的电感值。 模块化有源电感器可以有利地存储在ASIC库中，以便于灵活和方便的电路设计。

公开(公告)号：US20090231025A1

公开(公告)日：2009-09-17

申请号：US12045974

申请日：2008-03-11

申请人： Ping-Chuan Wang ,  Jong-ru Guo ,  Louis L. Hsu ,  Zhijian Yang

发明人： Ping-Chuan Wang ,  Jong-ru Guo ,  Louis L. Hsu ,  Zhijian Yang

IPC分类号： G05F1/46

CPC分类号： G05F1/56

摘要： A circuit and a method for extending the lifetime of a semiconductor chip. The circuit including a voltage reference generator, a voltage switch, a threshold voltage regulator device and a threshold voltage monitor device tunes an automatic internal power supply. The voltage reference generator provides one or more reference voltage levels that are transmitted to the voltage switch. The threshold voltage monitor device monitors the threshold voltage of the device, triggering the voltage switch to select a reference level for use as a voltage reference for the regulator when the threshold voltage of the monitored device exceeds a predetermined value. The regulator then converts the external power supply to an internal supply and holds it at the predetermined reference level.

摘要翻译： 一种用于延长半导体芯片寿命的电路和方法。 包括电压基准发生器，电压开关，阈值电压调节器装置和阈值电压监视器装置的电路调谐自动内部电源。 电压参考发生器提供一个或多个传输到电压开关的参考电压电平。 阈值电压监视器件监视器件的阈值电压，当被监视器件的阈值电压超过预定值时，触发电压开关选择参考电平，以用作调节器的电压基准。 调节器然后将外部电源转换为内部电源并将其保持在预定的参考电平。

公开(公告)号：US20090033355A1

公开(公告)日：2009-02-05

申请号：US11832796

申请日：2007-08-02

申请人： Louis Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

发明人： Louis Hsu ,  Jong-Ru Guo ,  Ping-Chuan Wang ,  Zhijian Yang

IPC分类号： G01R31/27

CPC分类号： G01R31/2621

摘要： An on-chip circuit to quantitatively measure threshold voltage shifts of a MOSFET. The circuit includes a programmable Vt reference sensor; a programmable Vt monitoring sensor; and a comparator for receiving inputs from the reference and monitoring sensors providing an output flag signal. The shifting of the MOSFET device voltage threshold monitors process variations, geometry sensitivity, plasma damage, stress, and hot carriers and other device damages. The same circuit also measures voltage differences between any two nodes in an integrated circuit chip or wafer.

摘要翻译： 用于定量测量MOSFET的阈值电压偏移的片上电路。 该电路包括可编程Vt参考传感器; 可编程Vt监控传感器; 以及比较器，用于从提供输出标志信号的参考和监视传感器接收输入。 MOSFET器件电压阈值的偏移可以监视工艺变化，几何感应，等离子体损伤，应力和热载体以及其他器件损坏。 相同的电路还测量集成电路芯片或晶片中的任何两个节点之间的电压差。