公开(公告)号：US20070123049A1

公开(公告)日：2007-05-31

申请号：US11164278

申请日：2005-11-17

申请人： Kao-Su Huang ,  Ying-Ming Tseng ,  Chia-Hsun Yu ,  Chih-Hung Lin

发明人： Kao-Su Huang ,  Ying-Ming Tseng ,  Chia-Hsun Yu ,  Chih-Hung Lin

IPC分类号： C23F1/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302

CPC分类号： H01L21/28035 ,  H01L21/02071 ,  H01L21/32137

摘要： A semiconductor process is provided. A substrate is provided and then a to-be-etched layer is formed on the substrate. A patterned photoresist layer is formed on the to-be-etched layer. The to-be-etching layer is etched using a gaseous etchant to form a patterned layer. In the meantime, some of the gaseous etchant is condensed on the patterned photoresist layer and above the substrate after the etching process. Thereafter, a heat treatment process is performed to remove the condensed gaseous etchant. An ion implanting process is performed to form a doped region in the substrate. After the ion implanting process, the patterned photoresist layer is removed.

摘要翻译： 提供半导体工艺。 提供衬底，然后在衬底上形成被蚀刻层。 在被蚀刻层上形成图案化的光致抗蚀剂层。 使用气体蚀刻剂蚀刻待蚀刻层以形成图案化层。 同时，在刻蚀工艺之后，一些气体蚀刻剂在图案化的光致抗蚀剂层上和基板之上被冷凝。 此后，进行热处理工艺以除去冷凝的气态蚀刻剂。 执行离子注入工艺以在衬底中形成掺杂区域。 在离子注入工艺之后，去除图案化的光致抗蚀剂层。