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公开(公告)号:US4019645A
公开(公告)日:1977-04-26
申请号:US420824
申请日:1973-12-03
申请人: Karl Seiler , Martin Selke , Oswald Siegling , Heinz Herzog , Horst Albrecht , Heinrich Mohn
发明人: Karl Seiler , Martin Selke , Oswald Siegling , Heinz Herzog , Horst Albrecht , Heinrich Mohn
CPC分类号: C03B23/207 , C30B15/10 , C30B35/002 , Y10S117/90 , Y10T117/1032
摘要: A crucible of pure transparent silica glass or pure translucent or opaque silica glass for the production of monocrystals used in making semiconductor elements which includes a hollow cylindrical part and a welded-on head. The head end of the hollow cylindrical part is formed from a tube with a head margin portion constricted towards the tube axis which is formed by shaping one end of the tube. A plate is welded into the aperture formed by the constricted head margin portion and has an area equal to at least one-tenth and at most four-fifths of the total head area made up by the head margin portion and the head.
摘要翻译: 纯透明石英玻璃或纯半透明或不透明石英玻璃的坩埚,用于制造用于制造半导体元件的单晶,其包括中空圆柱形部分和焊接头。 中空圆柱形部分的头端由管形成,其具有通过使管的一端成形而形成为朝向管轴线收缩的头部边缘部分。 板被焊接到由收缩的头部边缘部分形成的孔中,并且具有等于由头部边缘部分和头部组成的总头部区域的至少十分之一至最多四分之五的面积。
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公开(公告)号:US4102666A
公开(公告)日:1978-07-25
申请号:US616522
申请日:1975-09-25
申请人: Peter Baumler , Gerhard Hofer , Tassilo Korner , Heinrich Mohn , Karl Seiler , Fritz Simmat , Karlheinz Rau
发明人: Peter Baumler , Gerhard Hofer , Tassilo Korner , Heinrich Mohn , Karl Seiler , Fritz Simmat , Karlheinz Rau
IPC分类号: C03B23/207 , C03B32/02 , C03C10/00 , C03C17/02 , C03C17/23 , C03C17/34 , C30B31/10 , H01L21/00 , C03C21/00
CPC分类号: C30B31/10 , C03B23/207 , C03B32/02 , C03C10/0009 , C03C17/02 , C03C17/23 , C03C17/3411 , C03C17/3417 , H01L21/00 , C03C2217/213 , C03C2217/24 , C03C2218/17
摘要: Quartz glass element, such as a diffusion tube useful in the production of semiconductor elements, capable of forming an outer layer of uniformly fine crystalline silica such as cristobalite or tridymite when heated to a temperature at which such crystalline silica forms containing crystallization promoting nuclei having a rate of diffusion in quartz glass less than that of sodium at elevated temperatures. Such nuclei are preferably present in the outer half of the element wall. When the quartz glass element is exposed to elevated temperatures, the nuclei promotes the formation of the outer layer of uniformly fine crystalline silica which imparts thermal dimensional stability for extended periods of use at elevated temperatures.
摘要翻译: 石英玻璃元件,例如可用于制造半导体元件的扩散管,当加热至含有结晶促进核的结晶二氧化硅形成的温度时,能够形成均匀细微结晶二氧化硅的外层,例如方石英或鳞石英, 石英玻璃中的扩散速率低于钠在高温下的扩散速率。 这种核优选存在于元件壁的外半部中。 当石英玻璃元件暴露于升高的温度时,核促进了均匀细微结晶二氧化硅的外层的形成,其在高温下赋予长时间使用的热尺寸稳定性。
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