公开(公告)号：US20050035459A1

公开(公告)日：2005-02-17

申请号：US10946675

申请日：2004-09-22

申请人： Kathleen Yu ,  Kirk Strozewski ,  Janos Farkas ,  Hector Sanchez ,  Yeong-Jyh Lii

发明人： Kathleen Yu ,  Kirk Strozewski ,  Janos Farkas ,  Hector Sanchez ,  Yeong-Jyh Lii

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/528 ,  H01L21/4763 ,  H01L21/44 ,  H01L29/40

CPC分类号： H01L23/5283 ,  H01L21/76807 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.

摘要翻译： 导线的厚度变化，有助于克服RC延迟和噪声耦合。 通过改变线路厚度，如果需要在导体之间保持规定的最小间距，同时保持预定的期望的RC参数和导线的噪声特性，则避免导体宽度的变化。 通过将介电层蚀刻成不同的厚度来实现导体深度变化。 电介质层上的不同厚度的导电填充导致厚度变化的导线。 在特定金属水平可用的不同的导线厚度可以另外用于除信号或电源导线之外的半导体结构，例如器件的触点，通孔或电极。 为了满足期望的设计标准，确定互连厚度如何变化所需的厚度分析可以是自动化的并且作为CAD工具提供。

公开(公告)号：US20080171285A1

公开(公告)日：2008-07-17

申请号：US10595762

申请日：2005-02-15

申请人： Kyle Patterson ,  Kirk Strozewski

发明人： Kyle Patterson ,  Kirk Strozewski

IPC分类号： G03C1/00 ,  G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041 ,  G03F7/70341

摘要： In an immersion lithography method, the photoresist layer is provided with a shield layer to protect it from degradation caused by contact with the immersion liquid. The shield layer is transparent at the exposure wavelength and is substantially impervious to the immersion liquid. The shield layer can be formed of a material which can be removed using the same developer as is used to develop the photoresist layer after exposure.

摘要翻译： 在浸没式光刻方法中，光致抗蚀剂层设置有屏蔽层，以防止其与浸没液体接触引起的劣化。 屏蔽层在曝光波长下是透明的，并且基本上不渗透浸液。 屏蔽层可以由可以用曝光后用于显影光致抗蚀剂层的相同显影剂除去的材料形成。

公开(公告)号：US20060136861A1

公开(公告)日：2006-06-22

申请号：US11018637

申请日：2004-12-21

申请人： Kevin Lucas ,  Robert Boone ,  Mehul Shroff ,  Kirk Strozewski ,  Chi-Min Yuan ,  Jason Porter

发明人： Kevin Lucas ,  Robert Boone ,  Mehul Shroff ,  Kirk Strozewski ,  Chi-Min Yuan ,  Jason Porter

IPC分类号： G06F17/50

CPC分类号： G06F17/5068

摘要： A method for improving manufacturability of a design includes performing space or enclosure checks on multiple interacting layers of a layout design and then using the resulting space or enclosure data to move predetermined feature edges in an altered design database to decrease the risk of features widths, feature spaces or feature enclosures being patterned smaller than designed. In some embodiments, the upsized features are larger in the wafer circuit pattern than are drawn in a designed database. The method for improving manufacturability of a design, in some embodiments, is stored on a computer readable storage medium.

摘要翻译： 一种用于改进设计的可制造性的方法包括在布局设计的多个交互层上执行空间或外壳检查，然后使用所得到的空间或外壳数据来移动改变的设计数据库中的预定特征边缘以降低特征宽度，特征 图案的空间或特征外壳图案比设计的小。 在一些实施例中，晶片电路图案中的大尺寸特征比在设计的数据库中绘制的特征更大。 在一些实施例中，用于提高设计的可制造性的方法被存储在计算机可读存储介质上。