摘要:
A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.
摘要:
A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.
摘要:
A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.
摘要:
A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.
摘要:
A charge coupled device comprises: a semiconductor substrate of one conductivity type; a one-dimensional first charge coupled device including a plurality of continuous electrodes arranged in a one-dimensional array on the semiconductor substrate and a channel region formed below each of the electrodes; a second charge coupled device that is continuous to an end of the first charge coupled device and includes two branched portions, each of the two branched portions comprising at least one electrode arranged in the one-dimensional array; a detecting portion that detects as an electrical signal a charge transferred by each of the branch portions of the second charge coupled device; and a signal output portion that outputs a signal detected by the detecting portion, wherein distal one of the electrodes of the first charge coupled device, which is adjacent to the second charge coupled device, is formed independently from the other ones of the electrodes of the first charge coupled device so as to be fixed at a predetermined dc potential.
摘要:
A two-branch outputting solid-state imaging device is provided and includes: two output amplifiers including a first output amplifier and a second output amplifier, each outputting a voltage signal in accordance with the signal charge transferred toward the output end through the charge transfer path; and a branching part that distributes the signal charge transferred through the charge transfer path toward the first output amplifier in a case the signal charge corresponds to the first signal charge, toward the second output amplifier in a case the signal charge corresponds to the second signal charge, and toward the first output amplifier in a case the signal charge corresponds to the third signal charge.
摘要:
A driving method for a solid state image pickup device, having four or more transfer stages as one transfer unit, includes reading signal charge from the charge accumulation regions to the vertical charge transfer channels. The reading step includes (b-1) applying the barrier forming voltage to a first transfer electrode to form a barrier of at least one stage per the transfer unit; (b-2) applying the read pulse to a second transfer electrode to read signal charge from a corresponding charge accumulation region to a corresponding vertical charge transfer channel; and (b-3) applying a cancellation pulse to a third transfer electrode spaced by at least one transfer stage from the first transfer electrode, the cancellation pulse cancelling out a potential change in the charge accumulation region to be caused by the read pulse.
摘要:
A charge coupled device comprises: a semiconductor substrate of one conductivity type; a one-dimensional first charge coupled device including a plurality of continuous electrodes arranged in a one-dimensional array on the semiconductor substrate and a channel region formed below each of the electrodes; a second charge coupled device that is continuous to an end of the first charge coupled device and includes two branched portions, each of the two branched portions comprising at least one electrode arranged in the one-dimensional array; a detecting portion that detects as an electrical signal a charge transferred by each of the branch portions of the second charge coupled device; and a signal output portion that outputs a signal detected by the detecting portion, wherein distal one of the electrodes of the first charge coupled device, which is adjacent to the second charge coupled device, is formed independently from the other ones of the electrodes of the first charge coupled device so as to be fixed at a predetermined dc potential.
摘要:
A first voltage is impressed to a reading out electrode for reading out accumulated signal electric charges from photo electric conversion elements to transfer channels in a reading out period and at a same time during the reading out period a second voltage is imposed to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode in a first mode for outputting signal electric charges independently, and only the first voltage is imposed only to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period in the second mode for adding the signal electric charges.
摘要:
A method for driving a solid-state imaging element, which includes photoelectric conversion parts; vertical charge-transfer paths transferring signal charges from the photoelectric conversion parts in the vertical direction, each of the vertical charge-transfer paths including pairs of a first and second electrodes; and a horizontal charge-transfer path transferring the signal charge in a horizontal direction, is provided and includes applying driving pulses to the first and second electrodes to transfer the signal charge in the vertical direction. The transferring of the signal charge in the vertical charge-transfer paths is performed in such a way that when the signal charge is transferred from an electrode whose length is longer, a charge transfer time is lengthened, and that when the signal charge is transferred from an electrode whose length is shorter, a charge transfer time is shortened.