公开(公告)号：US20060033830A1

公开(公告)日：2006-02-16

申请号：US11202066

申请日：2005-08-12

申请人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

发明人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14843 ,  H04N5/3728

摘要： A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

公开(公告)号：US07564494B2

公开(公告)日：2009-07-21

申请号：US11202066

申请日：2005-08-12

申请人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

发明人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14843 ,  H04N5/3728

摘要： A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

公开(公告)号：US20060033829A1

公开(公告)日：2006-02-16

申请号：US11202021

申请日：2005-08-12

申请人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

发明人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

IPC分类号： H04N5/335

CPC分类号： H04N5/3591

摘要： A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

公开(公告)号：US07554592B2

公开(公告)日：2009-06-30

申请号：US11202021

申请日：2005-08-12

申请人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

发明人： Katsumi Ikeda ,  Yuko Nomura ,  Makoto Kobayashi

IPC分类号： H04N5/335

CPC分类号： H04N5/3591

摘要： A solid-state imaging apparatus comprises a semiconductor substrate, a multiplicity of photo electric conversion elements, a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels and transfer electrodes, reading out parts and a driving device that imposes a first voltage to the reading out electrode for reading out the accumulated signal electric charge from the photo electric conversion elements to the transfer channels in a reading out period and at a same time during the reading out period imposes a second voltage to at least one of the transfer electrodes adjoining to the reading out electrode for each photo electric conversion element for accumulating the signal electric charge in the vertical electric charge transfer channel under the one of the transfer electrode. Damage in the dynamic range of the solid-state imaging apparatus can be prevented.

摘要翻译： 一种固体摄像装置，包括半导体衬底，多个光电转换元件，具有多个垂直电荷转移通道的垂直电荷转移装置和转移电极，读出部分和施加第一电压的驱动装置 读出电极，用于在读出期间读出从光电转换元件到传送通道的累积信号电荷，并且在读出期间的同时，向传送电极中的至少一个施加第二电压 邻接于用于每个光电转换元件的读出电极，用于在转移电极之一下的垂直电荷转移通道中累积信号电荷。 可以防止固体摄像装置的动态范围的损伤。

公开(公告)号：US20090115820A1

公开(公告)日：2009-05-07

申请号：US11902445

申请日：2007-09-21

申请人： Yuko Nomura ,  Isao Amemiya ,  Kazuhiko Higuchi ,  Kenichi Mori

发明人： Yuko Nomura ,  Isao Amemiya ,  Kazuhiko Higuchi ,  Kenichi Mori

IPC分类号： B41J2/045

CPC分类号： B41J2/14008

摘要： An inkjet recording apparatus includes: an ink holding chamber having a through hole to jet ink, and holding the ink; and a head unit jetting the ink held in the ink holding chamber from the through hole. The head unit includes an ultrasonic wave generation member, an ultrasonic wave focusing member focusing the ultrasonic waves generated at the ultrasonic wave generation member in a vicinity of the through hole, an ultrasonic wave propagation portion propagateting the ultrasonic waves leaving the ultrasonic wave focusing member, and a container portion containing the ultrasonic wave generation member, the ultrasonic wave focusing member, and the ultrasonic wave propagation portion.

摘要翻译： 一种喷墨记录装置，包括：具有用于喷射墨水的通孔并保持墨水的墨水容纳室; 以及头单元，其从所述通孔喷射保持在所述墨水容纳室中的墨。 头单元包括超声波产生部件，将超声波产生部件中产生的超声波聚焦在通孔附近的超声波聚焦部件，传播离开超声波聚焦部件的超声波的超声波传播部， 以及包含超声波发生部件，超声波聚焦部件和超声波传播部的容器部。

公开(公告)号：US20070042519A1

公开(公告)日：2007-02-22

申请号：US11504648

申请日：2006-08-16

申请人： Yuko Nomura ,  Shinji Uya

发明人： Yuko Nomura ,  Shinji Uya

IPC分类号： H01L21/00

CPC分类号： H01L27/14887 ,  H01L27/14689

摘要： A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.

摘要翻译： 一种固态成像装置的制造方法，所述装置包括：半导体衬底; 每个光电二极管包括与半导体衬底的表面相邻形成的表面侧第一导电类型区域和直接位于表面侧第一导电类型区域下方的第二导电类型区域; 设置在表面侧第一导电类型区域附近的第二导电型垂直传输区域; 设置在垂直传送区域下方的至少一个第一导电类型的像素间隔离区域; 以及设置在所述第一导电型像素间隔离区域的下方的至少一个第一导电型溢出阻挡区域，所述方法包括：在半导体衬底中形成所述第一导电型溢出阻挡区域的第一步骤; 以及从倾向于发生沟道的方向离子注入第一导电型杂质离子的第二步骤，以形成第一导电类型像素间隔离区域中的至少一个。

公开(公告)号：US20060043511A1

公开(公告)日：2006-03-02

申请号：US11188646

申请日：2005-07-26

申请人： Yuko Nomura ,  Shinji Uya

发明人： Yuko Nomura ,  Shinji Uya

IPC分类号： H01L31/0232

CPC分类号： H01L27/14887

摘要： A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 μm or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical transfer channels in a horizontal direction.

摘要翻译： 提供一种固态图像拾取装置，其包括：以矩阵形状设置在半导体衬底中的电荷累积区域; 形成在所述半导体衬底中的多个垂直传输沟道，每个垂直传输沟道彼此靠近所述电荷累积区的每一列; 垂直传输电极形成在垂直传输通道上方; 形成在垂直传输通道正下方并围绕电荷累积区的沟道保护性杂质层; 一个或多个像素分离杂质层，形成在沟道保护杂质层下面和与沟道保护杂质层相对的位置; 具有在比所述像素分离杂质层更深的位置处的杂质浓度的峰值位置的溢出阻挡区域，所述杂质浓度的峰值位置距所述半导体基板的表面为3μm以下的深度; 以及用于从水平方向传送从垂直传送通道传送的信号电荷的水平CCD。

公开(公告)号：US08419497B2

公开(公告)日：2013-04-16

申请号：US12923949

申请日：2010-10-15

申请人： Isao Takasu ,  Yuko Nomura ,  Tsuyoshi Hioki ,  Isao Amemiya ,  Kazuhide Abe

发明人： Isao Takasu ,  Yuko Nomura ,  Tsuyoshi Hioki ,  Isao Amemiya ,  Kazuhide Abe

IPC分类号： H01J9/00

CPC分类号： H01L33/54 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.

摘要翻译： 一种制造发光器件的方法。 该方法包括：将发光芯片安装在基板上; 通过使用液滴喷射装置形成透明树脂部分和荧光体层，所述透明树脂部分形成为圆顶形状并且覆盖所述发光芯片以将其外部填充在所述基板上，所述荧光体层包含磷光体和 形成在透明树脂部分的至少其顶侧附近的外部; 并且在透明树脂部分的外部和靠近基板的荧光体层的位置处形成反射层。

公开(公告)号：US20120169807A1

公开(公告)日：2012-07-05

申请号：US13395482

申请日：2009-09-14

申请人： Yuko Nomura ,  Yasuharu Hosono ,  Isao Amemiya

发明人： Yuko Nomura ,  Yasuharu Hosono ,  Isao Amemiya

IPC分类号： B41J2/015

CPC分类号： B41J2/015 ,  B41J2/0057 ,  B41J2/14008

摘要： There is provided a printing device configured to eject a dispersed body containing a solid particle and a liquid. The printing device includes a film and an acoustic head. The film has a first major surface and a second major surface on an opposite side of the first major surface. The first major surface is provided with a first recess accommodating the liquid and a second recess provided on a bottom face of the first recess and accommodating the solid particle. The acoustic head focuses an acoustic wave from a side of the second major surface toward the first recess and the second recess. Thus, even in the case of discharging a dispersed body containing solid particles, it is possible to uniformize the amount of solid particles contained in ejected droplets and it is possible to uniformly make a print.

摘要翻译： 提供了一种构造成喷射含有固体颗粒和液体的分散体的打印装置。 打印装置包括胶片和声头。 该膜具有在第一主表面的相对侧上的第一主表面和第二主表面。 第一主表面设置有容纳液体的第一凹部和设置在第一凹部的底面上并容纳固体颗粒的第二凹部。 声学头将声波从第二主表面的侧面朝向第一凹部和第二凹部聚焦。 因此，即使在排出含有固体颗粒的分散体的情况下，也可以使喷出的液滴中所含的固体颗粒的量均匀化，并且可以均匀地进行印刷。

公开(公告)号：US07736937B2

公开(公告)日：2010-06-15

申请号：US11504648

申请日：2006-08-16

申请人： Yuko Nomura ,  Shinji Uya

发明人： Yuko Nomura ,  Shinji Uya

IPC分类号： H01L21/00

CPC分类号： H01L27/14887 ,  H01L27/14689

摘要： A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first conductivity type inter-pixel isolation region.

摘要翻译： 一种固态成像装置的制造方法，所述装置包括：半导体衬底; 每个光电二极管包括与半导体衬底的表面相邻形成的表面侧第一导电类型区域和直接位于表面侧第一导电类型区域下方的第二导电类型区域; 设置在表面侧第一导电类型区域附近的第二导电型垂直传输区域; 设置在垂直传送区域下方的至少一个第一导电类型的像素间隔离区域; 以及设置在所述第一导电型像素间隔离区域的下方的至少一个第一导电型溢出阻挡区域，所述方法包括：在半导体衬底中形成所述第一导电型溢出阻挡区域的第一步骤; 以及从倾向于发生沟道的方向离子注入第一导电型杂质离子的第二步骤，以形成第一导电类型像素间隔离区域中的至少一个。