Multilayer chip varistor
    1.
    发明授权
    Multilayer chip varistor 失效
    多层芯片压敏电阻

    公开(公告)号:US07649435B2

    公开(公告)日:2010-01-19

    申请号:US11390107

    申请日:2006-03-28

    IPC分类号: H01C7/10

    摘要: A multilayer chip varistor comprises a multilayer body in which a plurality of varistor portions are arranged along a predetermined direction, and a plurality of terminal electrodes. Each varistor portion has a varistor layer to exhibit nonlinear voltage-current characteristics, and a plurality of internal electrodes disposed so as to interpose the varistor layer between them. Each terminal electrode is disposed on a first outer surface parallel to the predetermined direction out of outer surfaces of the multilayer body and is electrically connected to a corresponding internal electrode out of the plurality of internal electrodes. Each of the plurality of internal electrodes includes a first electrode portion overlapping with another first electrode portion between adjacent internal electrodes out of the plurality of internal electrodes, and a second electrode portion led from the first electrode portion so as to be exposed in the first outer surface. The plurality of terminal electrodes are electrically connected via the respective second electrode portions to the corresponding internal electrodes.

    摘要翻译: 多层芯片变阻器包括其中沿着预定方向布置多个变阻器部分的多层体和多个端子电极。 每个变阻器部分具有非线性电压 - 电流特性的变阻器层,以及设置成在它们之间插入可变电阻层的多个内部电极。 每个端子电极设置在与多层体的外表面平行的预定方向的第一外表面上,并且与多个内部电极中的对应的内部电极电连接。 所述多个内部电极中的每一个包括与所述多个内部电极之间的相邻内部电极之间的另一个第一电极部分重叠的第一电极部分和从所述第一电极部分引出以暴露在所述第一外部电极中的第二电极部分 表面。 多个端子电极经由各自的第二电极部分电连接到相应的内部电极。

    Multilayer chip varistor
    2.
    发明申请
    Multilayer chip varistor 失效
    多层芯片压敏电阻

    公开(公告)号:US20060250211A1

    公开(公告)日:2006-11-09

    申请号:US11390107

    申请日:2006-03-28

    IPC分类号: H01C7/10

    摘要: A multilayer chip varistor comprises a multilayer body in which a plurality of varistor portions are arranged along a predetermined direction, and a plurality of terminal electrodes. Each varistor portion has a varistor layer to exhibit nonlinear voltage-current characteristics, and a plurality of internal electrodes disposed so as to interpose the varistor layer between them. Each terminal electrode is disposed on a first outer surface parallel to the predetermined direction out of outer surfaces of the multilayer body and is electrically connected to a corresponding internal electrode out of the plurality of internal electrodes. Each of the plurality of internal electrodes includes a first electrode portion overlapping with another first electrode portion between adjacent internal electrodes out of the plurality of internal electrodes, and a second electrode portion led from the first electrode portion so as to be exposed in the first outer surface. The plurality of terminal electrodes are electrically connected via the respective second electrode portions to the corresponding internal electrodes.

    摘要翻译: 多层芯片变阻器包括其中沿着预定方向布置多个变阻器部分的多层体和多个端子电极。 每个变阻器部分具有非线性电压 - 电流特性的变阻器层,以及设置成在它们之间插入可变电阻层的多个内部电极。 每个端子电极设置在与多层体的外表面平行的预定方向的第一外表面上,并且与多个内部电极中的对应的内部电极电连接。 所述多个内部电极中的每一个包括与所述多个内部电极之间的相邻内部电极之间的另一个第一电极部分重叠的第一电极部分和从所述第一电极部分引出以暴露在所述第一外部电极中的第二电极部分 表面。 多个端子电极经由各自的第二电极部分电连接到相应的内部电极。

    Varistor element
    3.
    发明授权
    Varistor element 失效
    压敏电阻元件

    公开(公告)号:US07639470B2

    公开(公告)日:2009-12-29

    申请号:US11605447

    申请日:2006-11-29

    IPC分类号: H01C1/00 H02H7/10

    CPC分类号: H01C1/148 H01C7/18

    摘要: A varistor element comprises a varistor element body, a plurality of inner electrode pairs, a connecting conductor, and a plurality of terminal electrodes. The varistor element body has first and second main faces opposing each other. Each inner electrode pair has first and second inner electrodes. The first and second inner electrodes are arranged so as to oppose each other at least partly within the varistor element body. The connecting conductor is arranged on the first main face so as to electrically connect the first inner electrodes in a predetermined inner electrode pair in the plurality of inner electrode pairs to each other. The terminal electrodes are provided so as to correspond to the second inner electrodes in the plurality of inner electrode pairs, and are arranged on the second main face so as to electrically connect with the second inner electrodes.

    摘要翻译: 变阻器元件包括变阻器元件体,多个内电极对,连接导体和多个端子电极。 变阻器元件体具有彼此相对的第一和第二主表面。 每个内部电极对具有第一和第二内部电极。 第一和第二内部电极被布置成至少部分地在可变电阻元件主体内彼此相对。 连接导体布置在第一主面上,以便使多个内电极对中的预定​​内电极对中的第一内电极彼此电连接。 端子电极被设置为与多个内部电极对中的第二内部电极对应,并且被布置在第二主面上以与第二内部电极电连接。

    Varistor and method of producing the same
    4.
    发明申请
    Varistor and method of producing the same 失效
    压敏电阻及其制造方法

    公开(公告)号:US20060220780A1

    公开(公告)日:2006-10-05

    申请号:US11389240

    申请日:2006-03-27

    申请人: Dai Matsuoka Yo Saito

    发明人: Dai Matsuoka Yo Saito

    IPC分类号: H01C7/10

    CPC分类号: H01C7/112 H01C7/12

    摘要: A varistor has a varistor element body, and an external electrode disposed on the varistor element body. The varistor element body contains ZnO as a principal component, and a rare-earth metal. The external electrode has an electrode layer. The electrode layer is formed on an external surface of the varistor element body by simultaneous firing with the varistor element body. The electrode layer contains Pd.

    摘要翻译: 变阻器具有变阻器元件本体和设置在变阻器元件主体上的外部电极。 变阻器元件主体包含ZnO作为主要成分,并含有稀土金属。 外部电极具有电极层。 电极层通过与可变电阻元件体同时烧制而形成在可变电阻元件体的外表面上。 电极层含有Pd。

    Varistor and method of producing varistor
    5.
    发明授权
    Varistor and method of producing varistor 失效
    变阻器及其制造方法

    公开(公告)号:US07724123B2

    公开(公告)日:2010-05-25

    申请号:US11598065

    申请日:2006-11-13

    IPC分类号: H01C7/10

    CPC分类号: H01C17/30 H01C7/112 H01C17/28

    摘要: A varistor is provided with a varistor element, and an external electrode disposed on the varistor element. The varistor element contains ZnO as a principal ingredient and contains a rare-earth element and Ca. The external electrode is formed by baking on an outer surface of the varistor element and contains Pt. When the external electrode is formed by baking on the varistor element, a compound of the rare-earth element and Pt and a compound of Ca and Pt are formed near an interface between the varistor element and the external electrode, and exist there. The existence of these compounds enhances the bonding strength between the varistor element and the external electrode.

    摘要翻译: 变阻器设置有变阻器元件和设置在变阻器元件上的外部电极。 变阻器元件含有ZnO作为主要成分,并含有稀土元素和Ca。 外部电极通过在可变电阻元件的外表面上进行烘烤而形成,并含有Pt。 当通过在可变电阻元件上烘烤形成外部电极时,在可变电阻元件和外部电极之间的界面附近形成稀土元素和Pt的化合物以及Ca和Pt的化合物,并存在于该电阻元件。 这些化合物的存在增强了可变电阻元件和外部电极之间的结合强度。

    Varistor and method of producing the same
    6.
    发明授权
    Varistor and method of producing the same 失效
    压敏电阻及其制造方法

    公开(公告)号:US07705708B2

    公开(公告)日:2010-04-27

    申请号:US11389240

    申请日:2006-03-27

    申请人: Dai Matsuoka Yo Saito

    发明人: Dai Matsuoka Yo Saito

    IPC分类号: H01C7/10

    CPC分类号: H01C7/112 H01C7/12

    摘要: A varistor has a varistor element body, and an external electrode disposed on the varistor element body. The varistor element body contains ZnO as a principal component, and a rare-earth metal. The external electrode has an electrode layer. The electrode layer is formed on an external surface of the varistor element body by simultaneous firing with the varistor element body. The electrode layer contains Pd.

    摘要翻译: 变阻器具有变阻器元件本体和设置在变阻器元件主体上的外部电极。 变阻器元件主体包含ZnO作为主要成分,并含有稀土金属。 外部电极具有电极层。 电极层通过与可变电阻元件体同时烧制而形成在可变电阻元件体的外表面上。 电极层含有Pd。

    Light emitting device
    8.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07505239B2

    公开(公告)日:2009-03-17

    申请号:US11402869

    申请日:2006-04-13

    IPC分类号: H02H9/00

    摘要: A light emitting device has a semiconductor light emitting element and a multilayer chip varistor. The multilayer chip varistor has a multilayer body with a varistor portion therein, and a plurality of external electrodes disposed on an outer surface of the multilayer body. The varistor portion has a varistor layer containing ZnO as a principal component and exhibiting nonlinear voltage-current characteristics, and a plurality of internal electrodes arranged to interpose the varistor layer between them. Each of the external electrodes is connected to a corresponding internal electrode out of the plurality of internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor. The semiconductor light emitting element is connected to corresponding external electrodes out of the plurality of external electrodes so as to be connected in parallel to the varistor portion.

    摘要翻译: 发光器件具有半导体发光元件和多层片式变阻器。 多层片式压敏电阻具有其中具有变阻器部分的多层体,以及设置在多层体的外表面上的多个外部电极。 变阻器部分具有包含ZnO作为主要成分并具有非线性电压 - 电流特性的变阻器层,以及布置成在它们之间插入可变电阻层的多个内部电极。 每个外部电极连接到多个内部电极中的对应的内部电极。 半导体发光元件设置在多层片式压敏电阻上。 半导体发光元件与多个外部电极中的相应的外部电极连接,以便与压敏电阻部分并联连接。

    Varistor element
    9.
    发明申请
    Varistor element 失效
    压敏电阻元件

    公开(公告)号:US20070146954A1

    公开(公告)日:2007-06-28

    申请号:US11605447

    申请日:2006-11-29

    IPC分类号: H02H9/06

    CPC分类号: H01C1/148 H01C7/18

    摘要: A varistor element comprises a varistor element body, a plurality of inner electrode pairs, a connecting conductor, and a plurality of terminal electrodes. The varistor element body has first and second main faces opposing each other. Each inner electrode pair has first and second inner electrodes. The first and second inner electrodes are arranged so as to oppose each other at least partly within the varistor element body. The connecting conductor is arranged on the first main face so as to electrically connect the first inner electrodes in a predetermined inner electrode pair in the plurality of inner electrode pairs to each other. The terminal electrodes are provided so as to correspond to the second inner electrodes in the plurality of inner electrode pairs, and are arranged on the second main face so as to electrically connect with the second inner electrodes.

    摘要翻译: 变阻器元件包括变阻器元件体,多个内电极对,连接导体和多个端子电极。 变阻器元件体具有彼此相对的第一和第二主表面。 每个内部电极对具有第一和第二内部电极。 第一和第二内部电极被布置成至少部分地在可变电阻元件主体内彼此相对。 连接导体布置在第一主面上,以便使多个内电极对中的预定​​内电极对中的第一内电极彼此电连接。 端子电极被设置为与多个内部电极对中的第二内部电极对应,并且被布置在第二主面上以与第二内部电极电连接。

    Varistor and method of producing varistor
    10.
    发明申请
    Varistor and method of producing varistor 失效
    变阻器及其制造方法

    公开(公告)号:US20070132540A1

    公开(公告)日:2007-06-14

    申请号:US11598065

    申请日:2006-11-13

    IPC分类号: H01C7/10

    CPC分类号: H01C17/30 H01C7/112 H01C17/28

    摘要: A varistor is provided with a varistor element, and an external electrode disposed on the varistor element. The varistor element contains ZnO as a principal ingredient and contains a rare-earth element and Ca. The external electrode is formed by baking on an outer surface of the varistor element and contains Pt. When the external electrode is formed by baking on the varistor element, a compound of the rare-earth element and Pt and a compound of Ca and Pt are formed near an interface between the varistor element and the external electrode, and exist there. The existence of these compounds enhances the bonding strength between the varistor element and the external electrode.

    摘要翻译: 变阻器设置有变阻器元件和设置在变阻器元件上的外部电极。 变阻器元件含有ZnO作为主要成分,并含有稀土元素和Ca。 外部电极通过在可变电阻元件的外表面上进行烘烤而形成,并含有Pt。 当通过在可变电阻元件上烘烤形成外部电极时,在可变电阻元件和外部电极之间的界面附近形成稀土元素和Pt的化合物以及Ca和Pt的化合物,并存在于该电阻元件。 这些化合物的存在增强了可变电阻元件和外部电极之间的结合强度。