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公开(公告)号：US08018515B2
公开(公告)日：2011-09-13
申请号：US11883757
申请日：2006-02-02
CPC分类号： H04N5/3559 , H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.
摘要翻译： 提供了具有改进的线性度和动态范围的固态成像装置。 固态成像装置中的每个像素部分Pm，n包括：用于产生与入射光强度相对应的量的电荷的掩埋光电二极管PD; 电容元件C并联连接到掩埋光电二极管PD，以积累在埋入式光电二极管PD中产生的电荷; 放大晶体管T1，用于输出对应于输入到栅极端子的电压值的电压值; 转移晶体管T2，用于将与电容元件C中的累积电荷量相对应的电压值输入到放大晶体管T1的栅极端; 用于对电容元件C的电荷进行放电的放电晶体管T3; 以及选择晶体管T4，用于选择性地将从放大晶体管T1输出的电压值输出到布线Ln。
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公开(公告)号：US20080192134A1
公开(公告)日：2008-08-14
申请号：US11883757
申请日：2006-02-02
IPC分类号： H04N5/335
CPC分类号： H04N5/3559 , H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.
摘要翻译： 提供了具有改进的线性度和动态范围的固态成像装置。 固态成像装置中的每个像素部分P m，n N包括：用于产生与入射光强度相对应的量的电荷的掩埋光电二极管PD; 电容元件C并联连接到掩埋光电二极管PD，以积累在埋入式光电二极管PD中产生的电荷; 用于输出对应于输入到所述栅极端子的电压值的电压值的放大晶体管T 1; 用于将对应于电容元件C中的累积电荷量的电压值输入到放大晶体管T 1的栅极端子的转移晶体管T SUB2 < 用于放电电容元件C的电荷的放电晶体管T 3 3; 以及用于选择性地将从放大晶体管T 1 1输出的电压值输出到布线L n2的选择晶体管T 4。
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公开(公告)号：US06670903B2
公开(公告)日：2003-12-30
申请号：US10343016
申请日：2003-01-27
申请人： Kazuki Fujita , Seiichiro Mizuno
发明人： Kazuki Fujita , Seiichiro Mizuno
IPC分类号： H03M114
摘要： A signal from a photodiode (PD) is supplied to an A/D converter circuit (30) through an integrator (10) and a switch circuit (20). An amplifier circuit (40) amplifies a residue in A/D conversion, and the amplified residue (analog value) is supplied to the A/D converter circuit (30) through the switch circuit (20) and converted to a digital value by the A/D converter circuit (30).
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公开(公告)号：US07969491B2
公开(公告)日：2011-06-28
申请号：US11898857
申请日：2007-09-17
申请人： Seiichiro Mizuno , Hiroo Yamamoto , Kazuki Fujita
发明人： Seiichiro Mizuno , Hiroo Yamamoto , Kazuki Fujita
IPC分类号： H04N3/14
CPC分类号： G01J1/46
摘要： An amount of charges consonant with the intensity of the light entering photodiodes is generated, and the level of the charges is determined by a charge level determination circuit. Based on this determined charge level, a capacitance setting circuit sets a capacitance of an integrating capacitor unit in an integrating circuit. Thereafter, in the integrating circuit, the charges generated by the photodiodes are integrated in the integrating capacitor unit, and a voltage having a value consonant with the amount of the integrated charges is output. When background light is strong and the overall intensity of incident light is high, a comparatively large capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected without saturation. When background light is weak and the overall intensity of incident light is low, a comparatively small capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected at high sensitivity, regardless of the surrounding conditions.
摘要翻译： 产生与进入光电二极管的光的强度相关的电荷量，并且电荷的电平由电荷水平确定电路确定。 基于该确定的充电电平，电容设定电路将积分电容器单元的电容设定在积分电路中。 此后，在积分电路中，由光电二极管产生的电荷积分在积分电容器单元中，并且输出具有与积分电荷量相关的值的电压。 当背景光强且入射光的总强度高时，对于积分电路的可变电容器单元设置较大的电容，并且不饱和地检测入射光的强度。 当背景光弱并且入射光的总强度低时，对于积分电路的可变电容器单元设置相对小的电容，并且不管周围条件如何，以高灵敏度检测入射光的强度。
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公开(公告)号：US20080012974A1
公开(公告)日：2008-01-17
申请号：US11898857
申请日：2007-09-17
申请人： Seiichiro Mizuno , Hiroo Yamamoto , Kazuki Fujita
发明人： Seiichiro Mizuno , Hiroo Yamamoto , Kazuki Fujita
IPC分类号： H04N5/335
CPC分类号： G01J1/46
摘要： An amount of charges consonant with the intensity of the light entering photodiodes is generated, and the level of the charges is determined by a charge level determination circuit. Based on this determined charge level, a capacitance setting circuit sets a capacitance of an integrating capacitor unit in an integrating circuit. Thereafter, in the integrating circuit, the charges generated by the photodiodes are integrated in the integrating capacitor unit, and a voltage having a value consonant with the amount of the integrated charges is output. When background light is strong and the overall intensity of incident light is high, a comparatively large capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected without saturation. When background light is weak and the overall intensity of incident light is low, a comparatively small capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected at high sensitivity, regardless of the surrounding conditions.
摘要翻译： 产生与进入光电二极管的光的强度相关的电荷量，并且电荷的电平由电荷水平确定电路确定。 基于该确定的充电电平，电容设定电路将积分电容器单元的电容设定在积分电路中。 此后，在积分电路中，由光电二极管产生的电荷积分在积分电容器单元中，并且输出具有与积分电荷量相关的值的电压。 当背景光强且入射光的总强度高时，对于积分电路的可变电容器单元设置较大的电容，并且不饱和地检测入射光的强度。 当背景光弱并且入射光的总强度低时，对于积分电路的可变电容器单元设置相对小的电容，并且不管周围条件如何，以高灵敏度检测入射光的强度。
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公开(公告)号：US07286172B2
公开(公告)日：2007-10-23
申请号：US10343427
申请日：2001-08-03
申请人： Seiichiro Mizuno , Hiroo Yamamoto , Kazuki Fujita
发明人： Seiichiro Mizuno , Hiroo Yamamoto , Kazuki Fujita
IPC分类号： H04N3/14
CPC分类号： G01J1/46
摘要： An amount of charges consonant with the intensity of the light entering photodiodes is generated, and the level of the charges is determined by a charge level determination circuit. Based on this determined charge level, a capacitance setting circuit sets a capacitance of an integrating capacitor unit in an integrating circuit. Thereafter, in the integrating circuit, the charges generated by the photodiodes are integrated in the integrating capacitor unit, and a voltage having a value consonant with the amount of the integrated charges is output. When background light is strong and the overall intensity of incident light is high, a comparatively large capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected without saturation. When background light is weak and the overall intensity of incident light is low, a comparatively small capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected at high sensitivity, regardless of the surrounding conditions.
摘要翻译： 产生与进入光电二极管的光的强度相关的电荷量，并且电荷的电平由电荷水平确定电路确定。 基于该确定的充电电平，电容设定电路将积分电容器单元的电容设定在积分电路中。 此后，在积分电路中，由光电二极管产生的电荷积分在积分电容器单元中，并且输出具有与积分电荷量相关的值的电压。 当背景光强且入射光的总强度高时，对于积分电路的可变电容器单元设置较大的电容，并且不饱和地检测入射光的强度。 当背景光弱并且入射光的总强度低时，对于积分电路的可变电容器单元设置相对小的电容，并且不管周围条件如何，以高灵敏度检测入射光的强度。
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公开(公告)号：US06819281B2
公开(公告)日：2004-11-16
申请号：US10469034
申请日：2003-08-26
申请人： Kazuki Fujita , Seiichiro Mizuno
发明人： Kazuki Fujita , Seiichiro Mizuno
IPC分类号： H03M112
摘要： An A/D conversion circuit 20 comprises a coupling capacitor C201, feedback capacitor C202, switch SW202, amplifier 201, comparison portion 202, capacitance control portion 203, and variable capacitance portions 210, 220, and 230. The variable capacitance portion 210 comprises capacitors C211 to C214 and switches SW211 to SW214. One end of each of the capacitors C211 to C214 is connected to the inverted input terminal of the amplifier 201, and the other end is connected, via the respective switches SW211 to SW214, to either the reference voltage Vref1 or to the common voltage Vcom.
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公开(公告)号：US08625741B2
公开(公告)日：2014-01-07
申请号：US13054298
申请日：2009-07-13
申请人： Ryuji Kyushima , Kazuki Fujita , Junichi Sawada
发明人： Ryuji Kyushima , Kazuki Fujita , Junichi Sawada
IPC分类号： H05G1/64
摘要： A solid-state image pickup device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, and a correction processing section 40. In the photodetecting section 10, M×N pixel units P1,1 to PM,N each including a photodiode that generates charge of an amount according to an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. A charge generated in each pixel unit Pm,n is input to an integration circuit Sn through a readout wiring line LO,n, and a voltage value output from the integration circuit Sn according to the charge amount is output to an output wiring line Lout through a holding circuit Hn. In the correction processing section 40, a correction processing is applied to respective frame data output from the signal readout section 20, and the frame data after the correction processing is output. Accordingly, a solid-state image pickup device that allows acquiring a high-resolution image by correcting pixel data when any readout wiring line is disconnected is realized.
摘要翻译： 固态图像拾取装置1包括光电检测部分10，信号读出部分20，控制部分30和校正处理部分40.在光电检测部分10中，M×N个像素单元P1,1至PM，N 每个包括根据入射光强度产生量的光电二极管和连接到光电二极管的读出开关二维排列成M行和N列。 每个像素单元Pm，n中产生的电荷通过读出配线L0，n输入到积分电路Sn，并且根据电荷量从积分电路Sn输出的电压值被输出到输出配线L out 保持电路Hn。 在校正处理部40中，对从信号读出部20输出的各个帧数据进行校正处理，输出校正处理后的帧数据。 因此，实现了当任何读出布线断开时通过校正像素数据来获取高分辨率图像的固态图像拾取装置。
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9.发明申请公开(公告)号：US20130284893A1
公开(公告)日：2013-10-31
申请号：US13979539
申请日：2011-12-07
申请人： Ryuji Kyushima , Kazuki Fujita , Harumichi Mori
发明人： Ryuji Kyushima , Kazuki Fujita , Harumichi Mori
IPC分类号： H04N5/378
CPC分类号： H04N5/378 , H01L27/14645 , H01L27/14658 , H04N5/32 , H04N5/343 , H04N5/3742
摘要： A controlling section, by bringing readout switches of pixels of a certain row out of the M rows into a connected state, causes charges generated in the row to be input to integration circuits, causes first holding circuits to hold voltage values output from the integration circuits, and then brings transfer switches into a connected state to transfer the voltage values to the second holding circuits, and thereafter performs in parallel an operation for causing the voltage values to be sequentially output from the second holding circuits and an operation for, by bringing readout switches of pixels of another row into a connected state, causing charges generated in the row to be input to the integration circuits. Accordingly, a solid-state imaging device and a driving method thereof capable of suppressing variations in output characteristics, while solving the problem due to a delay effect are realized.
摘要翻译： 控制部通过将M行以外的某行的像素的读出开关导入到连接状态，使得在行中产生的电荷被输入到积分电路，使得第一保持电路保持从积分电路输出的电压值 ，然后使转移开关进入连接状态，将电压值传送到第二保持电路，然后并行执行使得从第二保持电路顺序地输出电压值的操作和通过读出的操作 将另一行的像素的开关转换为连接状态，使得在行中产生的电荷被输入到积分电路。 因此，实现了能够在解决由于延迟效果引起的问题的同时抑制输出特性的变化的固态成像装置及其驱动方法。
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公开(公告)号：US08477907B2
公开(公告)日：2013-07-02
申请号：US12989132
申请日：2009-04-22
申请人： Ryuji Kyushima , Kazuki Fujita , Harumichi Mori
发明人： Ryuji Kyushima , Kazuki Fujita , Harumichi Mori
IPC分类号： H05G1/64
CPC分类号： H01L27/14609 , A61B6/032 , H04N5/23245 , H04N5/32 , H04N5/343 , H04N5/3454 , H04N5/3745
摘要： A solid-state image pickup apparatus 1A includes a photodetecting section 10A, a signal readout section 20, and a controlling section 40A. In the photodetecting section 10A, M×N pixel units P1,1 to PM,N each including a photodiode and a readout switch are arrayed in M rows and N columns. Charges generated in each pixel unit Pm,n are input to an integrating circuit Sn through a readout wiring LO,n, and a voltage value output from the integrating circuit Sn in response to the charge amount is output through a holding circuits Hn. When in a first imaging mode, a voltage value according to an amount of charges generated in the photodiode PD of each of the M×N pixel units P1,1 to PM,N in the photodetecting section 10A is output from the signal readout section 20. When in a second imaging mode, a voltage value according to an amount of charges generated in the photodiode PD of each pixel unit Pm,n included in consecutive M1 rows in the photodetecting section 10A is output from the signal readout section 20.
摘要翻译： 固态图像拾取装置1A包括光电检测部分10A，信号读出部分20和控制部分40A。 在受光部10A中，分别包含光电二极管和读出用开关的M×N个像素部P1,1〜PM，N排列成M行N列。 每个像素单元Pm，n中产生的电荷通过读出配线LO，n输入到积分电路Sn，并且响应于充电量从积分电路Sn输出的电压值通过保持电路Hn输出。 当处于第一成像模式时，从信号读出部分20输出根据在光电检测部分10A中的M×N个像素单元P1,1至PM，N中的每一个的光电二极管PD中产生的电荷量的电压值 当在第二成像模式中，从信号读出部20输出根据在受光部10A中连续的M1行中包含的各像素部Pm，n的光电二极管PD中产生的电荷量的电压值。
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