公开(公告)号：US5294835A

公开(公告)日：1994-03-15

申请号：US920657

申请日：1992-07-28

申请人： Kazumasa Igarashi ,  Hideto Kimura ,  Megumu Nagasawa ,  Tsutomu Nishioka ,  Kazuhiro Ikemura ,  Hideyuki Usui ,  Michio Komoto ,  Haruo Tabata ,  Satoshi Ito

发明人： Kazumasa Igarashi ,  Hideto Kimura ,  Megumu Nagasawa ,  Tsutomu Nishioka ,  Kazuhiro Ikemura ,  Hideyuki Usui ,  Michio Komoto ,  Haruo Tabata ,  Satoshi Ito

IPC分类号： H01L23/29 ,  H01L23/28

CPC分类号： H01L23/296 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465

摘要： A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.

摘要翻译： 一种半导体器件，其中将半导体芯片封装在环氧树脂组合物中，其包含（A）由式（I）表示的环氧树脂：（*化学结构*）（I）其中R1，R2，R3和R4各自表示 具有1至4个碳原子的烷基，和（B）通过使由式（II）表示的硅烷化合物预先反应获得的反应产物：（*化学结构*）（II）其中X表示至少具有一个 一个选自缩水甘油基，氨基和巯基的官能团; Y表示具有1至4个碳原子的烷氧基; 和n表示0,1或2，与式（III）表示的酚芳烷基树脂（*化学结构*）（III）表示，其中m表示0或正整数。 环氧树脂组合物具有低吸湿性和低应力，以提供耐热裂纹性和耐湿性优异的半导体器件。

公开(公告)号：US5728763A

公开(公告)日：1998-03-17

申请号：US748911

申请日：1996-11-15

申请人： Miho Yamaguchi ,  Mitsuyoshi Shirai ,  Yoshitada Morikawa ,  Yoshiaki Mitsuoka ,  Michio Komoto

发明人： Miho Yamaguchi ,  Mitsuyoshi Shirai ,  Yoshitada Morikawa ,  Yoshiaki Mitsuoka ,  Michio Komoto

IPC分类号： H01L23/29 ,  C08K3/22

CPC分类号： H01L23/295 ,  H01L2924/0002 ,  H01L2924/12044

摘要： A semiconductor device obtained by encapsulating a semiconductor element with a thermosetting resin composition comprising a thermosetting resin (Component I) and a hardener (Component II) having the following components III and IV incorporated therein. The semiconductor device is thus provided with a high heat resistance at infrared reflow step and a high flame retardance, showing a drastically enhanced reliability. (III) A metal hydroxide represented by the following general formula (1): n(M.sub.a O.sub.b).cH.sub.2 O (1) wherein M represents a metallic element; a, b and c each represents a positive number; and n represents a positive number of 1 or more, with the proviso that when M.sub.a O.sub.b is repeated, the plurality of M's may be the same or different and that a and b may be the same or different; and (IV) a metal oxide represented by the following general formula (2): n'(Q.sub.d O.sub.e) (2) wherein Q represents a metallic element belonging to the group selected from the group consisting of Groups IVa, Va, VIa, VIIa, VIII, Ib and IIb in the Periodic Table; d and e each represents a positive number; and n' represents a positive number of 1 or more, with the proviso that when Q.sub.d O.sub.e is repeated, the plurality of Q's may be the same or different and that d and e may be the same or different.

摘要翻译： 一种半导体器件，其通过包含热固性树脂（组分I）和硬化剂（组分II）的热固性树脂组合物包封半导体元件而得到，该组合物具有下述组分III和IV。 因此，半导体器件在红外回流步骤和高阻燃性下具有高耐热性，显示出可靠性的显着提高。 （III）由以下通式（1）表示的金属氢氧化物：n（MaOb）.cH 2 O（1）其中M表示金属元素; a，b和c各自表示正数; n表示1以上的正数，条件是当重复MaOb时，多个M可以相同或不同，并且a和b可以相同或不同; 和（IV）由以下通式（2）表示的金属氧化物：n'（QdOe）（2）其中Q表示属于选自组IVa，Va，VIa，VIIa， VIII，Ib和IIb; d和e各自表示正数; 并且n'表示1以上的正数，条件是当QdOe重复时，多个Q可以相同或不同，d和e可以相同或不同。

公开(公告)号：US5624989A

公开(公告)日：1997-04-29

申请号：US424195

申请日：1995-04-19

申请人： Miho Yamaguchi ,  Mitsuyoshi Shirai ,  Yoshitada Morikawa ,  Yoshiaki Mitsuoka ,  Michio Komoto

发明人： Miho Yamaguchi ,  Mitsuyoshi Shirai ,  Yoshitada Morikawa ,  Yoshiaki Mitsuoka ,  Michio Komoto

IPC分类号： H01L23/29 ,  C08K3/22 ,  C08L63/00

CPC分类号： H01L23/295 ,  H01L2924/0002 ,  H01L2924/12044

摘要： A semiconductor device obtained by encapsulating a semiconductor element with a thermosetting resin composition comprising a thermosetting resin (Component I) and a hardener (Component II) having the following components III and IV incorporated therein. The semiconductor device is thus provided with a high heat resistance at infrared reflow step and a high flame retardance, showing a drastically enhanced reliability.(III) A metal hydroxide represented by the following general formula (1):n(M.sub.a O.sub.b).cH.sub.2 O (1)wherein M represents a metallic element; a, b and c each represents a positive number; and n represents a positive number of 1 or more, with the proviso that when M.sub.a O.sub.b is repeated, the plurality of M's may be the same or different and that a and b may be the same or different; and(IV) a metal oxide represented by the following general formula (2):n'(Q.sub.d O.sub.e) (2)wherein Q represents a metallic element belonging to the group selected from the group consisting of Groups IVa, Va, VIa, VIIa, VIII, Ib and IIb in the Periodic Table; d and e each represents a positive number; and n' represents a positive number of 1 or more, with the proviso that when Q.sub.d O.sub.e is repeated, the plurality of Q's may be the same or different and that d and e may be the same or different.

摘要翻译： 一种半导体器件，其通过包含热固性树脂（组分I）和硬化剂（组分II）的热固性树脂组合物包封半导体元件而得到，该组合物具有下述组分III和IV。 因此，半导体器件在红外回流步骤和高阻燃性下具有高耐热性，显示出可靠性的显着提高。 （III）由以下通式（1）表示的金属氢氧化物：n（MaOb）.cH 2 O（1）其中M表示金属元素; a，b和c各自表示正数; n表示1以上的正数，条件是当重复MaOb时，多个M可以相同或不同，并且a和b可以相同或不同; 和（IV）由以下通式（2）表示的金属氧化物：n'（QdOe）（2）其中Q表示属于选自组IVa，Va，VIa，VIIa， VIII，Ib和IIb; d和e各自表示正数; n'表示1以上的正数，条件是当QdOe重复时，多个Q可以相同或不同，d和e可以相同或不同。