摘要:
A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.
摘要:
A resin composition for semiconductor encapsulation having good moldability, of which the cured product has effective electromagnetic wave shieldability, is provided. A resin composition for semiconductor encapsulation, containing spherical sintered ferrite particles having the following properties (a) to (c) : (a) the soluble ion content of the particles is at most 5 ppm; (b) the mean particle size of the particles is from 10 to 50 μm; (c) the crystal structure of the particles by X-ray diffractiometry is a spinel structure.
摘要:
An epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a phenolic resin, a hardening accelerator and an inorganic filler. The epoxy resin composition having the following properties (X) to (Z) does not cause the chip tilting attributable to resin flow during resin encapsulation, such as semiconductor element shifting or gold wire deformation, and can obtain highly reliable semiconductor devices: (X) the viscosity thereof as measured with a flow tester at 175° C. is from 50 to 500 P; (Y) the minimum melt viscosity thereof as determined from the temperature dependence of viscosity thereof as measured with a dynamic viscoelastic meter at a shear rate of 5 (1/s) is 1×105 poise or lower; and (Z) the ratio of the viscosity thereof as measured at 90° C. (Z1) to that as measured at 110° C. (Z2) both with a dynamic viscoelastic meter at a shear rate of 5 (1/s), (Z1/Z2), is 2.0 or higher.
摘要:
An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.
摘要:
A method of production of a semiconductor device such as a plastic pin grid array (PPGA) and a plastic ball grid array (PBGA) having a cavity-fill form. In this method, first, a semiconductor element (3) is placed in a cavity (6) formed in a multiple step-like substrate (2). Under this state, a pellet (7), which is in a solid state at a normal temperature, made of an encapsulating resin composition containing specific components, and has specific characteristics, is placed on the semiconductor element (3). Next, the semiconductor device is heated so that the pellet can melt to fill the cavity (6) with the composition, thereby encapsulating the semiconductor device (3). According to the present invention, a semiconductor device having low stress performance and excellent moisture-proof reliability can be efficiently produced.
摘要:
A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.
摘要:
A substrate B for use in production of a semiconductor device is used, which substrate includes an adhesive sheet 50 having a base layer 51 and an adhesive layer 52, and a plurality of independently provided electrically conductive portions 20. A semiconductor element having electrodes 11 formed thereon is firmly fixed onto the substrate B, and upper portions of the plurality of electrically conductive portions 20 and the electrodes 11 of the semiconductor element 10 are electrically connected by using wires 30. The semiconductor element 10, wires 30 and electrically conductive portions 20 are sealed by using a sealing resin 40. Each of the electrically conductive portions 20 has overhanging portions 20a, and a side face 60a of the electrically conductive portion 20 is roughened, thus enhancing the joining strength between each electrically conductive portion 20 and the sealing resin 40.
摘要:
An epoxy resin composition for semiconductor encapsulation which does not contain conductive foreign metallic particles having such a size that they cannot be detected and eliminated by the conventional method for eliminating conductive foreign metallic particles. The epoxy resin composition for semiconductor encapsulation comprises the following components (A) to (D). Conductive foreign metallic particles having a size of 20 μM or more are substantially not contained in the aforementioned epoxy resin composition.(A) An epoxy resin.(B) A phenol resin.(C) A hardening accelerator.(D) An inorganic filler.
摘要:
A semiconductor device P includes a die pad 20, a semiconductor element 30 which is loaded on the die pad 20, and a sealing resin 40. A plurality of electrically conductive portions 10 each having a layered structure including a metal foil 1 comprising copper or a copper alloy, and electrically conductive portion plating layers 2 provided at both upper and lower ends of the metal foil 1 are arranged around the die pad 20. The die pad 20 has a lower die pad plating layer 2b, and the semiconductor element 30 is loaded on the die pad 20 comprising such a die pad plating layer 2b. Electrodes 30a provided on the semiconductor element 30 are electrically connected with top ends of the electrically conductive portions 10 via wires 3, respectively. The lower electrically conductive portion plating layers 2 of the electrically conductive portions 10 and the die pad plating layer 2b of the die pad 20 are exposed outside from the sealing resin 40 on their back faces.
摘要:
An epoxy resin composition for semiconductor encapsulation in producing surface mount lead-less thin semiconductor devices. The epoxy resin composition for surface mount lead-less semiconductor device encapsulation which device comprising an encapsulating resin layer and, encapsulated therein, a substrate, a semiconductor element mounted on the substrate, two or more conductive parts disposed around the semiconductor element, and wires which electrically connect electrodes of the semiconductor element to the conductive parts, wherein the bottom face of the substrate and the bottom face of each conductive part are exposed without being encapsulated in the encapsulating resin layer, and the epoxy resin composition used for forming the encapsulating resin layer has the following properties (α) and (β): (α) a melt viscosity of 2-10 Pa.s at 175° C.; and (β) a flexural strength of cured state of 130 MPa or higher at ordinary temperature.