公开(公告)号：US08054588B2

公开(公告)日：2011-11-08

申请号：US13025842

申请日：2011-02-11

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

摘要： A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

摘要翻译： 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。

公开(公告)号：US20110129690A1

公开(公告)日：2011-06-02

申请号：US13025842

申请日：2011-02-11

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

IPC分类号： G11B5/33 ,  B82Y30/00

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

摘要： A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

摘要翻译： 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。