公开(公告)号：US20090057677A1

公开(公告)日：2009-03-05

申请号：US12193238

申请日：2008-08-18

申请人： Kazunori ISOGAI ,  Akihiro KAMADA

发明人： Kazunori ISOGAI ,  Akihiro KAMADA

IPC分类号： H01L29/04 ,  H01L21/28

CPC分类号： H01L29/045 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/91 ,  H01L29/7833

摘要： A method for fabricating a ferroelectric device includes Step S1 of forming a polycrystalline electrode on or above a substrate in which a MOS transistor is formed, Step S2 of performing metal organic chemical vapor deposition to form an amorphous film of bismuth titanate on the polycrystalline electrode, and Step S3 of performing annealing at a temperature in a predetermined range to make the amorphous film be a polycrystalline ferroelectric film made up of a large number of bismuth titanate having a layered perovskite structure. Step S3 includes a sub-step of increasing a temperature of the amorphous film to a lower limit of the predetermined temperature range at a temperature increase rate at which crystal nuclei are not grown.

摘要翻译： 铁电体元件的制造方法包括在形成有MOS晶体管的基板上形成多晶电极的工序S1，在多晶电极上进行金属有机化学气相沉积的步骤S2，形成钛酸铋非晶膜， 以及在预定范围内的温度下进行退火以使非晶膜为由具有层状钙钛矿结构的大量钛酸铋构成的多晶铁电体膜的步骤S3。 步骤S3包括以不生长晶核的升温速度将非晶膜的温度升高到规定温度范围的下限的子步骤。