公开(公告)号：US20100184240A1

公开(公告)日：2010-07-22

申请号：US12731538

申请日：2010-03-25

申请人： Kazutoshi IZUMI ,  Kouichi KOSEKO

发明人： Kazutoshi IZUMI ,  Kouichi KOSEKO

IPC分类号： H01L21/02

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating film; and forming a first insulating film on the capacitor protecting insulating film by a plasma CVD method where, while a high-frequency bias electric power is applied toward the semiconductor substrate, a plasma-generating high frequency electric power is applied to first deposition gas containing oxygen and silicon compound gas. In the method, a condition by which moisture content in the capacitor protecting insulating film becomes less than that in the first insulating film is adopted as a film deposition condition for the capacitor protecting insulating film.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括以下步骤：形成覆盖电容器的氢扩散防止绝缘膜; 在氢扩散防止绝缘膜上形成电容器保护绝缘膜; 并且通过等离子体CVD法在电容器保护绝缘膜上形成第一绝缘膜，其中，当向半导体衬底施加高频偏置电力时，将等离子体产生的高频电力施加到含氧的第一沉积气体 和硅化合物气体。 在该方法中，作为电容器保护用绝缘膜的成膜条件，采用电容器保护绝缘膜中的含水量比第一绝缘膜小的条件。

公开(公告)号：US20080121958A1

公开(公告)日：2008-05-29

申请号：US11946444

申请日：2007-11-28

申请人： Kazutoshi IZUMI

发明人： Kazutoshi IZUMI

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A stacked film of a first insulation film being a silicon oxide film with an extremely low moisture content, and a second insulation film being a silicon oxide film with a higher moisture content than the first insulation film, therefore, with a low in-plane film thickness distribution rate is formed, and this is polished by CMP. Polishing is performed until the second insulation film is wholly removed directly above a ferroelectric capacitor structure and a surface of the first insulation film is exposed to some extent. At this time, surface flattening is performed for a top surface of a first portion in the first insulation film and a top surface of the second insulation film, and an interlayer insulation film constituted of the first insulation film and the second insulation film remaining on a second portion of the first insulation film is formed.

摘要翻译： 第一绝缘膜的层叠膜是水分含量极低的氧化硅膜，第二绝缘膜是具有比第一绝缘膜高的水分含量的氧化硅膜，因此具有低的面内膜 形成厚度分布率，并通过CMP抛光。 进行抛光直到第二绝缘膜被完全去除在铁电电容器结构上方，并且第一绝缘膜的表面在一定程度上暴露。 此时，对第一绝缘膜的第一部分的顶面和第二绝缘膜的顶面进行表面平坦化，由第一绝缘膜和第二绝缘膜构成的层间绝缘膜残留在 形成第一绝缘膜的第二部分。

公开(公告)号：US20080169571A1

公开(公告)日：2008-07-17

申请号：US12014858

申请日：2008-01-16

申请人： Kazutoshi IZUMI

发明人： Kazutoshi IZUMI

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H01L21/461

CPC分类号： H01L27/11507 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65

摘要： A semiconductor device, and a method for manufacturing the semiconductor device, has forming a layer having an in-plane polishing amount distribution, and setting the approximate uniform thickness of the layer over the whole semiconductor wafer by the process such that the in-plane polishing amount distribution is approximately uniform.

摘要翻译： 半导体器件和半导体器件的制造方法已经形成了具有平面内抛光量分布的层，并且通过这样的处理将整个半导体晶片的层的近似均匀厚度设定为使得面内抛光 数量分布大致均匀。