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公开(公告)号:US5949120A
公开(公告)日:1999-09-07
申请号:US805497
申请日:1997-02-26
IPC分类号: G02B6/12 , G02B6/42 , H01L31/103 , H01L31/06 , H01L31/0232
CPC分类号: H01L31/1035 , G02B6/12004 , G02B6/42 , G02B2006/12123 , G02B2006/12126
摘要: This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the first layer. The first semiconductor layer is arranged on the side of the first layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. The second semiconductor layer is arranged on the side of the second layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. When a predetermined reverse bias voltage is applied between the first and second semiconductor layers, the first layer is entirely depleted and the second layer is partially depleted.
摘要翻译: 该半导体光电检测器包括光吸收层,n型第一半导体层和p型第二半导体层。 光吸收层包括与第一层接触形成的n型第一层和p型第二层。 第一半导体层布置在第一层的侧面,并且在光吸收边缘处具有较短的波长,并且在光吸收层中具有较低的折射率。 第二半导体层布置在第二层的侧面,并且在光吸收边缘处具有较短的波长,并且在光吸收层中具有较低的折射率。 当在第一和第二半导体层之间施加预定的反向偏置电压时,第一层完全耗尽,第二层被部分耗尽。