公开(公告)号：US12080823B2

公开(公告)日：2024-09-03

申请号：US18185507

申请日：2023-03-17

Applicant: Northwestern University

Inventor： Manijeh Razeghi

IPC: H01L31/101 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/1844 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1035 ,  H01L31/105

Abstract: Diffusion-based and ion implantation-based methods are provided for fabricating planar photodetectors. The methods may be used to fabricate planar photodetectors comprising type II superlattice absorber layers but without mesa structures. The fabricated planar photodetectors exhibit high quantum efficiencies, low dark current densities, and high specific detectivities as compared to photodetectors having mesa structures.

公开(公告)号：US11799011B2

公开(公告)日：2023-10-24

申请号：US17715140

申请日：2022-04-07

Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

Inventor： Chao-Hsing Huang ,  Yu-Chung Chin ,  Van-Truong Dai

IPC: H01L29/45 ,  H01L29/737 ,  H01L31/103 ,  H01S5/042 ,  H01S5/02 ,  H01L27/144 ,  H01S5/183

CPC classification number: H01L29/452 ,  H01L27/1443 ,  H01L29/7371 ,  H01L31/1035 ,  H01S5/0206 ,  H01S5/04256 ,  H01S5/183

Abstract: Provided is a semiconductor epitaxial wafer, including a substrate, a first epitaxial structure, a first ohmic contact layer and a second epitaxial stack structure. It is characterized in that the ohmic contact layer includes a compound with low nitrogen content, and the ohmic contact layer does not induce significant stress during the crystal growth process. Accordingly, the second epitaxial stack structure formed on the ohmic contact layer can have good epitaxial quality, thereby providing a high-quality semiconductor epitaxial wafer for fabricating a GaAs integrated circuit or a InP integrated circuit. At the same time, the ohmic contact properties of ohmic contact layers are not affected, and the reactants generated during each dry etching process are reduced.

公开(公告)号：US11721774B2

公开(公告)日：2023-08-08

申请号：US17025033

申请日：2020-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Yun Yang ,  Chun-Yuan Chen ,  Ching I Li

IPC: H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/146 ,  H01L31/103

CPC classification number: H01L31/03042 ,  H01L27/14643 ,  H01L27/14698 ,  H01L31/03529 ,  H01L31/1035 ,  H01L31/1864

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a dopant having a first doping type. A deep well region is disposed within the semiconductor substrate, where the deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type, where the second dopant comprises gallium.

公开(公告)号：US20180350851A1

公开(公告)日：2018-12-06

申请号：US15778940

申请日：2016-09-14

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： SHINICHI YOSHIDA ,  SHUNSUKE MARUYAMA ,  RYOSUKE MATSUMOTO ,  SHUJI MANDA ,  TOMOMASA WATANABE

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/102 ,  H04N5/33 ,  H04N5/369 ,  H01L31/0224

CPC classification number: H01L27/1443 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14649 ,  H01L31/02161 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/102 ,  H01L31/1035 ,  H04N5/33 ,  H04N5/369

Abstract: This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

公开(公告)号：US20180277697A1

公开(公告)日：2018-09-27

申请号：US15761051

申请日：2016-09-15

Applicant: SOCIÉTÉ FRANÇAISE DE DÉTECTEURS INFRAROUGES - SOFRADIR

Inventor： Laurent RUBALDO ,  Nicolas PERE LAPERNE ,  Alexandre KERLAIN ,  Alexandru NEDELCU

IPC: H01L31/0352 ,  H01L31/103

CPC classification number: H01L31/035209 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1035

Abstract: The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.

公开(公告)号：US09867544B2

公开(公告)日：2018-01-16

申请号：US14821933

申请日：2015-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho Kim

IPC: A61B5/00 ,  H01L31/0304 ,  G01J3/51 ,  G01J3/02 ,  G01J3/10 ,  G01J3/32 ,  G01J3/42 ,  G01J3/44 ,  H01L31/103 ,  G01J3/12

CPC classification number: A61B5/0075 ,  G01J3/0205 ,  G01J3/0227 ,  G01J3/0256 ,  G01J3/0259 ,  G01J3/0272 ,  G01J3/10 ,  G01J3/32 ,  G01J3/42 ,  G01J3/44 ,  G01J3/4406 ,  G01J3/51 ,  G01J2003/1213 ,  G01J2003/1226 ,  H01L31/1035

Abstract: Provided are a spectrometer that may be easily manufactured while having high resolution and sensitivity due to reduced light loss and a non-invasive biometric sensor including the spectrometer. The spectrometer includes: a stacked light absorbing structure including a plurality of absorbing layers stacked in a vertical direction and having different absorption wavelength bands, and a plurality of tunnel junction layers respectively interposed between the plurality of absorbing layers to electrically connect the plurality of absorbing layers; and an illuminating unit configured to provide the stacked light absorbing structure with an illumination light for saturation of the plurality of absorbing layers.

公开(公告)号：US20170314989A1

公开(公告)日：2017-11-02

申请号：US15375741

申请日：2016-12-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto

IPC: G01J1/42 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/0312 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02 ,  G01J5/00 ,  H01L31/18 ,  F23N5/08

CPC classification number: G01J1/429 ,  F23N5/082 ,  G01J5/0014 ,  G01J5/20 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14669 ,  H01L27/1467 ,  H01L31/02027 ,  H01L31/02164 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/02327 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/107 ,  H01L31/1812

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

公开(公告)号：US20170271542A1

公开(公告)日：2017-09-21

申请号：US15609771

申请日：2017-05-31

Applicant: AZASTRA OPTO INC.

Inventor： Simon FAFARD ,  Denis Paul MASSON

IPC: H01L31/109 ,  H01L31/103 ,  H01L31/14 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/18

CPC classification number: H01L31/109 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/1035 ,  H01L31/14 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/56

Abstract: An optical transducer system that has a light source and a transducer. The light source generates light that has a predetermined photon energy. The transducer has a bandgap energy that is smaller than the photon energy. An increased optical to electrical conversion efficiency is obtained by illuminating the transducer at increased optical power densities. A method of converting optical energy to electrical energy is also provided.

公开(公告)号：US20170123152A1

公开(公告)日：2017-05-04

申请号：US15347314

申请日：2016-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell A. Budd ,  Effendi Leobandung ,  Ning Li ,  Jean-Olivier Plouchart ,  Devendra K. Sadana

IPC: G02B6/122 ,  H01L31/0216 ,  H01S5/026 ,  G02B6/42 ,  G02B6/12 ,  H01S5/02 ,  H01L31/103 ,  H01L31/18

CPC classification number: G02B6/12004 ,  G02B6/12002 ,  G02B6/122 ,  G02B6/132 ,  G02B6/4201 ,  G02B6/428 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12176 ,  H01L31/02161 ,  H01L31/1035 ,  H01L31/1828 ,  H01L31/184

Abstract: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

公开(公告)号：US20170104074A1

公开(公告)日：2017-04-13

申请号：US14951512

申请日：2015-11-25

Applicant: Industrial Technology Research Institute

Inventor： Wei-Hung Kuo ,  Suh-Fang Lin ,  Kun-Fong Lin ,  Chia-Lung Tsai

IPC: H01L29/20 ,  H01L29/34 ,  H01L29/45

CPC classification number: H01L29/2003 ,  H01L29/34 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/778 ,  H01L31/0224 ,  H01L31/02363 ,  H01L31/1035 ,  H01L31/1856 ,  H01L33/16 ,  H01L33/30 ,  H01L33/382 ,  Y02E10/544

Abstract: In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.