公开(公告)号：US08130253B2

公开(公告)日：2012-03-06

申请号：US12457019

申请日：2009-05-29

申请人： Kazuya Ohkawa ,  Shinya Jyumonji ,  Masumi Taninaka ,  Hiroshi Hamano ,  Masumi Koizumi

发明人： Kazuya Ohkawa ,  Shinya Jyumonji ,  Masumi Taninaka ,  Hiroshi Hamano ,  Masumi Koizumi

IPC分类号： B41J2/45 ,  H01L21/00

CPC分类号： B41J2/45 ,  B41J2202/50 ,  H01L21/78

摘要： A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.

摘要翻译： 复合半导体器件由半导体晶片形成，半导体晶片具有形成半导体元件的多个器件形成区域和限定在器件形成区域之间的切割区域，并且通过在切割区域切割半导体晶片而形成。 复合半导体器件包括半导体衬底和层叠在半导体衬底上的多个布线层。 布线层至少包括导电膜。 形成连接部，在配线层的层叠方向上连接布线层。 每个连接部分相对于在切割区域中限定的切割位置设置在装置形成区域侧。

公开(公告)号：US20090322852A1

公开(公告)日：2009-12-31

申请号：US12457019

申请日：2009-05-29

申请人： Kazuya Ohkawa ,  Shinya Jyumonji ,  Masumi Taninaka ,  Hiroshi Hamano ,  Masumi Koizumi

发明人： Kazuya Ohkawa ,  Shinya Jyumonji ,  Masumi Taninaka ,  Hiroshi Hamano ,  Masumi Koizumi

IPC分类号： B41J27/00 ,  H01L23/48

CPC分类号： B41J2/45 ,  B41J2202/50 ,  H01L21/78

摘要： A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.

摘要翻译： 复合半导体器件由半导体晶片形成，半导体晶片具有形成半导体元件的多个器件形成区域和限定在器件形成区域之间的切割区域，并且通过在切割区域切割半导体晶片而形成。 复合半导体器件包括半导体衬底和层叠在半导体衬底上的多个布线层。 布线层至少包括导电膜。 形成连接部，在配线层的层叠方向上连接布线层。 每个连接部分相对于在切割区域中限定的切割位置设置在装置形成区域侧。