摘要:
A light emitting diode array includes a light emitting area formed on a semiconductor substrate, a diffusion prevention layer formed on the semiconductor substrate, and an insulating layer formed on the diffusion prevention layer. The diffusion prevention layer has a lower edge and the insulating layer has a level drop at this lower edge. An interconnection conductor extends on the insulating layer and is in ohmic contact with the light emitting region through holes in the insulating layer and the diffusion prevention layer. The interconnection conductor has a stepped portion at the level drop of the insulating layer, the stepped portion being located in a wide-width segment of the interconnection conductor. A method for forming such a light emitting diode array includes the steps of providing a semiconductor substrate, forming a light emitting region on the substrate, forming a diffusion prevention layer on the substrate surrounding the light emitting region, forming in insulating layer on the diffusion prevention layer, covering the light emitting region and the insulating layer with a conductive layer, forming a mask layer on a predetermined portion of the conductive layer, the mask layer having a wide-width segment located on the stepped portion, and selectively forming the interconnection conductor by etching the conductive layer using the mask layer. Several embodiments of both the method and the array are disclosed.
摘要:
A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.
摘要:
A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.
摘要:
A mother glass composition for graded index lenses, comprising the following glass components in mol %: 40≦SiO2≦65, 1≦TiO2≦10, 0≦MgO≦22, 2≦Li2O≦18, 2≦Na2O ≦20, 6≦Li2O+Na2O≦38, and from 0.1 to 15 mol % of any two or more of CaO, SrO and BaO, a graded index lens using the mother glass composition, a manufacturing method of the graded index lens, and an optical product and an optical instrument using the graded index lens, are provided.
摘要翻译:用于渐变折射率透镜的母玻璃组合物,其包含以摩尔%计的以下玻璃成分:40 <= SiO 2 = 65,1 / TiO 2 <= 10,0 <= MgO <= 22,2 <= Li 2 O <= 18, 2 <= Na 2 O <= 20,6 <= Li 2 O + Na 2 O <= 38和0.1〜15摩尔%的CaO,SrO和BaO中的任意两种以上,使用母玻璃组合物的渐变折射率透镜,制造方法 的渐变折射率透镜,以及使用渐变折射率透镜的光学产品和光学仪器。
摘要:
A mother glass composition for graded index lenses, comprising the following glass components in mol %: 40≦SiO2≦65, 1≦TiO2≦10, 0≦MgO≦22, 2≦Li2O≦18, 2≦Na2O≦20, 6≦Li2O+Na2O≦38, and from 0.1 to 15 mol % of any two or more of CaO, SrO and BaO, a graded index lens using the mother glass composition, a manufacturing method of the graded index lens, and an optical product and an optical instrument using the graded index lens, are provided.
摘要翻译:用于渐变折射率透镜的母玻璃组合物,其包含以摩尔%计的以下玻璃成分:40 <= NIO 2 = 65,1 <= TIO 2 <= 10, 0 <= MgO <= 22,2 <= LI <2> O <= 18,2 <= NA <2> O <= 20,6 <= LI < O + Na 2 O <= 38,以及0.1〜15摩尔%的CaO,SrO和BaO中的任意两种以上,使用母玻璃组合物的渐变折射率透镜, 提供了分级折射率透镜的制造方法,以及使用了渐变折射率透镜的光学产品和光学仪器。
摘要:
A light emitting diode array includes a light emitting area formed on a semiconductor substrate, a diffusion prevention layer formed on the semiconductor substrate, and an insulating layer formed on the diffusion prevention layer. The diffusion prevention layer has a lower edge and the insulating layer has a level drop at this lower edge. An interconnection conductor extends on the insulating layer and is in ohmic contact with the light emitting region through holes in the insulating layer and the diffusion prevention layer. The interconnection conductor has a stepped portion at the level drop of the insulating layer, the stepped portion being located in a wide-width segment of the interconnection conductor. A method for forming such a light emitting diode array includes the steps of providing a semiconductor substrate, forming a light emitting region on the substrate, forming a diffusion prevention layer on the substrate surrounding the light emitting region, forming in insulating layer on the diffusion prevention layer, covering the light emitting region and the insulating layer with a conductive layer, forming a mask layer on a predetermined portion of the conductive layer, the mask layer having a wide-width segment located on the stepped portion, and selectively forming the interconnection conductor by etching the conductive layer using the mask layer. Several embodiments of both the method and the array are disclosed.