公开(公告)号：US12057323B2

公开(公告)日：2024-08-06

申请号：US17559766

申请日：2021-12-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sangjine Park ,  Seohyun Kim ,  Sukhoon Kim ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC分类号： H01L21/3213 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/32139 ,  G03F7/2004 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/308 ,  H01L21/31144

摘要： A substrate processing method includes providing a surface tension reducing agent as a gas onto a substrate, the substrate having an exposed photoresist layer and layer of developer on the exposed photoresist layer, and causing a bulk flow of the developer in order to remove the developer from the substrate.

公开(公告)号：US12007692B2

公开(公告)日：2024-06-11

申请号：US18077577

申请日：2022-12-08

申请人： Tokyo Electron Limited

发明人： Hiroki Sakurai ,  Nobuhiro Ogata ,  Daisuke Goto ,  Kanta Mori ,  Kenji Yada ,  Yusuke Hashimoto ,  Shoki Mizuguchi ,  Yenrui Hsu

IPC分类号： G03F7/30 ,  G03F7/42

CPC分类号： G03F7/3021 ,  G03F7/426

摘要： A nozzle that mixes fluid containing steam or mist of pressurized pure water and processing liquid containing at least sulfuric acid and ejects mixed fluid of the fluid and the processing liquid, the nozzle comprising: at least one first ejection port ejecting the fluid; at least one second ejection port ejecting the processing liquid; and at least one lead-out path being in fluid communication with the at least one first ejection port and the at least one second ejection port and leading out the mixed fluid of the fluid ejected from the at least one first ejection port and the processing liquid ejected from the at least one second ejection port, wherein the at least one first ejection port or the at least one second ejection port is arranged to be directed to position deviated from central axis of the at least one lead-out path in a plan view.

公开(公告)号：US20180161828A1

公开(公告)日：2018-06-14

申请号：US15490075

申请日：2017-04-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Min-An YANG ,  Hao-Ming CHANG ,  Shao-Chi WEI ,  Kuo-Chin LIN ,  Sheng-Chang HSU ,  Li-Chih LU ,  Cheng-Ming LIN

IPC分类号： B08B3/08 ,  H01L21/02 ,  H01L21/027 ,  H01L21/66 ,  H01L21/67 ,  B08B3/10 ,  H04N5/33 ,  G01J5/10 ,  G01J5/00

CPC分类号： G01J5/0037 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/0081 ,  G03F7/3021 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67253 ,  H01L21/67288

摘要： A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.

公开(公告)号：US20180046083A1

公开(公告)日：2018-02-15

申请号：US15556517

申请日：2016-02-12

申请人： SCREEN Holdings Co., Ltd.

发明人： Masahito KASHIYAMA

IPC分类号： G03F7/30

CPC分类号： G03F7/30 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/027

摘要： Provided downstream of an on-off valve are a needle and a diaphragm that cooperates with the needle. The needle is driven by a motor. A controller causes the motor to move the diaphragm cooperating with the needle for increasing a volume of a flow path downstream of the on-off valve. Accordingly, this allows suck back, leading to prevention of drips of the processing liquid. In addition, the controller causes the motor to move the needle for regulating the flow rate of the processing liquid when the on-off valve is opened. This facilitates flow regulation of the processing liquid by the motor which is current1y made by the operator's sense. Moreover, since prevention of the drips of the processing liquid as well as the flow regulation of the processing liquid are performable with the same motor, a needless configuration is omittable to achieve space saving.

公开(公告)号：US20180012780A1

公开(公告)日：2018-01-11

申请号：US15638611

申请日：2017-06-30

申请人： Ebara Corporation

发明人： Hiroyuki Shinozaki ,  Yutaka Kobayashi

IPC分类号： H01L21/67 ,  G03F7/30 ,  C23C16/442 ,  C23C16/44 ,  H01L21/304 ,  B05C11/08

CPC分类号： H01L21/67051 ,  B05C11/08 ,  B24B37/107 ,  B24B53/017 ,  B24B57/02 ,  C23C16/4401 ,  C23C16/442 ,  G03F7/3021 ,  H01L21/304 ,  H01L21/67028 ,  H01L21/6715 ,  H01L21/6719

摘要： Disclosed is a substrate processing apparatus that includes: a polishing table; an atomizer configured to spray a fluid to a polishing surface; a polishing liquid supply nozzle configured to drop a slurry at a position that corresponds to a slurry dropping position set on the polishing table and is lower than the top surface of the atomizer; a nozzle moving mechanism configured to move the polishing liquid supply nozzle above the atomizer between the retreat position set outside the polishing table and the slurry dropping position; and a nozzle tip retreating mechanism configured to bring the tip end of the polishing liquid supply nozzle into a retreated position above the top surface of the atomizer when the polishing liquid supply nozzle moves between the slurry dropping position and the retreat position.

公开(公告)号：US09835948B2

公开(公告)日：2017-12-05

申请号：US14834621

申请日：2015-08-25

申请人： Tokyo Electron Limited

发明人： Koshi Muta ,  Hideharu Kyoda

IPC分类号： B05C11/08 ,  G03F7/30 ,  H01L21/67 ,  B05D1/00 ,  G06F19/00

CPC分类号： G03F7/3021 ,  B05C11/08 ,  B05D1/005 ,  G06F19/00 ,  H01L21/6715

摘要： A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.

公开(公告)号：US20170343899A1

公开(公告)日：2017-11-30

申请号：US15676925

申请日：2017-08-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yi-Rem CHEN ,  Ming-Shane LU ,  Chung-Hao CHANG ,  Jui-Ping CHUANG ,  Li-Kong TURN ,  Fei-Gwo TSAI

IPC分类号： G03F7/30 ,  H01L21/67

CPC分类号： G03F7/3021 ,  H01L21/67051 ,  H01L21/6715

摘要： A developing method includes rotating a wafer. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved from a first position to a second position. The first position and the second position are over the wafer and within a perimeter of the wafer when viewed from a top of the wafer. The developer solution is dispensed through the first nozzle when moving the first nozzle from the first position to the second position. The first nozzle is moved back from the second position to the first position immediately after the first nozzle is moved from the first position to the second position. The developer solution is dispensed through the first nozzle when moving the first nozzle from the second position to the first position.

公开(公告)号：US09817323B2

公开(公告)日：2017-11-14

申请号：US15040362

申请日：2016-02-10

申请人： Tokyo Electron Limited

发明人： Yuichi Yoshida ,  Kousuke Yoshihara

IPC分类号： B05B13/04 ,  B05D1/02 ,  G03B27/32 ,  G03B27/52 ,  G03D5/00 ,  G03F7/20 ,  H01L21/02 ,  H01L21/67 ,  G03F7/16 ,  G03F7/30 ,  G03F7/32

CPC分类号： G03F7/70975 ,  G03F7/162 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/02052 ,  H01L21/02104 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6715

摘要： A liquid treatment method includes: supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder; and thereafter supplying a second organic solvent to a substrate held by the substrate holder, the second solvent having a higher cleanliness than the first solvent.

公开(公告)号：US09786524B2

公开(公告)日：2017-10-10

申请号：US14253455

申请日：2014-04-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chung-Cheng Wang

IPC分类号： H01L21/02 ,  H01L21/67 ,  G03F7/30 ,  B05C5/00 ,  H01L21/687

CPC分类号： H01L21/67051 ,  B05C5/00 ,  G03F7/3021 ,  H01L21/67253 ,  H01L21/68792

摘要： The present disclosure provides a developing unit that includes a wafer stage designed to secure a semiconductor wafer; an exhaust mechanism configured around the wafer stage and designed to exhaust a fluid from the semiconductor wafer; and a multi-switch integrated with the exhaust mechanism and designed to control the exhaust mechanism at various open states.

公开(公告)号：US09581907B2

公开(公告)日：2017-02-28

申请号：US14572677

申请日：2014-12-16

申请人： SCREEN Semiconductor Solutions Co., Ltd.

发明人： Masahiko Harumoto ,  Akira Yamaguchi ,  Akihiro Hisai ,  Minoru Sugiyama ,  Takuya Kuroda

IPC分类号： B05D3/12 ,  G03F7/30 ,  G03F7/20 ,  H01L21/67 ,  B05D1/00

CPC分类号： G03F7/30 ,  B05D1/005 ,  G03F7/2041 ,  G03F7/3021 ,  H01L21/6715

摘要： A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other.

摘要翻译： 用于显影衬底的方法包括用旋转保持器旋转衬底并将显影剂从显影剂供给器上排列成排的多个排气口排出到衬底。 该方法还包括使移动机构在平面图中沿着延伸到基板中心的一个方向移动所述显影剂供给器，同时保持所述排气口在所述一个方向上的布置方向，从而使所述显影剂进料器基本上 中心和基底的边缘。 所述方法还包括使从所述排气口排出的显影剂在基板上分离的流中撞击，并使每一个分离的流在基板上螺旋地冲击，从而显影基板。 对应于所述排气口的显影剂冲击位置的至少两个轨迹彼此重叠。